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Número de pieza | HFA06TB120S | |
Descripción | Soft Recovery Diode | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HFA06TB120S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! HEXFREDTM
PD -20602 rev. B 01/2000
HFA06TB120S.. Series
Ultrafast, Soft Recovery Diode
www.DataSheet4U.com
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Guaranteed Avalanche
• Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
(K)
BASE
+
2
(N/C) 1
3 (A)
_
Description
International Rectifier's HFA06TB120S is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 6
amps continuous current, the HFA06TB120S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and heatsink
sizes. The HEXFRED HFA06TB120S is ideally suited for applications in power supplies
and power conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
VR = 1200V
VF(typ.)* = 2.4V
IF(AV) = 6.0A
Qrr (typ.)= 116nC
IRRM(typ.) = 4.4A
trr(typ.) = 26ns
di(rec)M/dt (typ.)* = 100A/µs
D2 Pak
Absolute Maximum Ratings
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
* 125°C
Max.
1200
8.0
80
24
62.5
25
-55 to +150
Units
V
A
W
°C
1
1 page HFA06TB120S ..Series
PD-20602 rev. B 01/2000
R EV ER SE R EC O VE RY CIRCU IT
VR = 200V
L = 70µH
0.01 Ω
D .U .T.
d if/dt
AD JU ST G
D
IR FP 250
S
IF
0
Fig. 9- Reverse Recovery Parameter Test Circuit
3
trr
ta
tb
1 d i f /d t
2
I RR M
Q rr 4
0.5 I RR M
di(rec )M /dt
5
0.75 IRR M
1cu. rdrief/dntt
-
Rate of change
through zero
of
crossing
2re. cIRoRveMr-y
Peak reverse
current
3. trr - Reverse recovery
time measured from zero
crossing point of negative
paegaxnotsdrisna0igpn.o5gIFl0atthtIoeRrdoRpuMotgoinhtz0we.r7ho5ercIeuRrRarMelinnte
4de. fQinrer d-
Area
by trr
under curve
and IRRM
Qrr =
trr X IRRM
2
5ch. adni(greec)Mo/fdt
- Peak rate of
current during
portion of trr
tb
Fig. 10 - Reverse Recovery Waveform and Definitions
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet HFA06TB120S.PDF ] |
Número de pieza | Descripción | Fabricantes |
HFA06TB120 | Ultrafast/ Soft Recovery Diode | International Rectifier |
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