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C5243 PDF даташит

Спецификация C5243 изготовлена ​​​​«Panasonic Semiconductor» и имеет функцию, называемую «NPN Transistor - 2SC5243».

Детали детали

Номер произв C5243
Описание NPN Transistor - 2SC5243
Производители Panasonic Semiconductor
логотип Panasonic Semiconductor логотип 

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C5243 Даташит, Описание, Даташиты
Power Transistors
2SC5243
Silicon NPN triple diffusion mesa type
For horizontal deflection output
s Features
q High breakdown voltage, and high reliability through the use of a
glass passivation layer
q High-speed switching
q Wide area of safe operation (ASO)
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
www.DataSheet4U.comPeak base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VEBO
IC
ICP*
IBP
PC
1700
1700
6
15
30
10
200
3.5
Junction temperature
Storage temperature
*Non-repetitive peak
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
20.0±0.5
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
1.5
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
1.5
2.7±0.3
0.6±0.2
123
1:Base
2:Collector
3:Emitter
TOP–3L Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
VCB = 1700V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 10A
IC = 10A, IB = 2.8A
IC = 10A, IB = 2.8A
VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 12A, IB1 = 2.4A, IB2 = –4.8A,
Resistance loaded
min typ max Unit
1 µA
50 µA
5 12
3V
1.5 V
3 MHz
1.5 2.5 µs
0.12 0.2
µs
1









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C5243 Даташит, Описание, Даташиты
Power Transistors
PC — Ta
240
220 (1) TC=Ta
(2) With a 100 × 100 × 2mm
200 Al heat sink
(1) (3) Without heat sink
180 (PC=3.0W)
160
140
120
100
80
60
40
(3)
20
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
16
TC=25˚C
14
12 IB=1000mA
800mA
600mA
10
400mA
8
200mA
6
4
2
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SC5243
1000
hFE — IC
VCE=5V
100
TC=100˚C
25˚C
10
–25˚C
1
0.1
0.01
0.1
1
Collector current IC (A)
10
VCE(sat) — IC
100
IC/IB=3.5
30
10
3
1
0.3
0.1 TC=–25˚C
0.03 25˚C 100˚C
0.01
0.1
0.3 1 3 10 30
Collector current IC (A)
100
VBE(sat) — IC
100
IC/IB=3.5
10
1 TC=–25˚C
25˚C 100˚C
0.1
0.01
0.1
1 10
Collector current IC (A)
100
1000
100
10
Rth(t) — t
Note: Rth was measured at Ta=25˚C and under natural convection
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(1)
(2)
1
Area of safe operation, horizontal operation ASO
50
f=64kHz, TC=25˚C
Area of safe operation for
the single pulse load curve
40
due to discharge in the
high-voltage rectifier tube
during horizontal operation
30
20
10
<1mA
0
0 400 800 1200 1600 2000
Collector to emitter voltage VCE (V)
0.1
0.01
10–4
10–3
10–2
10–1
1
10
Time t (s)
102 103
104
2










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