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CDBFR0520L PDF даташит

Спецификация CDBFR0520L изготовлена ​​​​«Comchip Technology» и имеет функцию, называемую «SMD Schottky Barrier Diode».

Детали детали

Номер произв CDBFR0520L
Описание SMD Schottky Barrier Diode
Производители Comchip Technology
логотип Comchip Technology логотип 

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CDBFR0520L Даташит, Описание, Даташиты
SMD Schottky Barrier Diode
CDBFR0520L(RoHs Device)
IO = 500 mA
VR = 20 Volts
SMD Diodes Specialist
Features
Low forward voltage.
Designed for mounting on small surface.
Extremely thin/leadless package.
Majority carrier conduction.
Mechanical data
Case: 1005(2512) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.006 gram(approx.).
1005(2512)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.020(0.50) Typ.
0.035(0.90)
0.027(0.70)
0.040(1.00) Typ.
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Peak reverse voltage
VRM
20 V
Reverse voltage
VR 20 V
Average forward rectified current
Forward current,surge peak
Storage temperature
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
IO
IFSM
TSTG
-40
0.5
5.5
+125
A
A
OC
Junction temperature
Tj +125 OC
Electrical Characteristics (at TA=25OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
Reverse current
Capacitance between terminals
IF = 100mA @Ta = 25 OC
IF = 500mA @Ta = 25 OC
IF = 100mA @Ta = 100 OC
IF = 500mA @Ta = 100 OC
VR = 10V @Ta = 25 OC
VR = 20V @Ta = 25 OC
f = 1 MHz, and 0 VDC reverse voltage
VF
IR
CT
300
385
220
mV
330
75
250
uA
170 pF
Reverse recovery time
IF = IR = 10mA, Irr x IR, RL = 100ohm
Trr
22 ns
QW-A1078
REV:A
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CDBFR0520L Даташит, Описание, Даташиты
SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBFR0520L)
Fig. 1 - Forward characteristics
1000
100
Fig. 2 - Reverse characteristics
100m
10m
75 C
1m
10
100u
25 C
1
0.1
0.0
0.1 0.2 0.3 0.4 0.5
Forward voltage (V)
0.6
10u
1u
0.1u
-25 C
10 20
30
Reverse voltage (V)
Fig. 3 - Capacitance between
terminals characteristics
120 f=1MHz
Ta = 25 C
100
80
60
40
20
0
0
5 10 15 20
Reverse voltage : (V)
Fig. 4 - Current derating curve
120
100
80
60
40
20
0
0 25 50 75 100 125 150
Ambient temperature ( C )
QW-A1078
REV:A
Page 2










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