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PDF CDBG820-G Data sheet ( Hoja de datos )
| Número de pieza | CDBG820-G | |
| Descripción | (CDBG820-G - CDBG860-G) SMD Schottky Barrier Diode | |
| Fabricantes | Comchip Technology | |
| Logotipo |  |
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SMD Schottky Barrier Diode
CDBG820-G THRU CDBG860-G (RoHS Device)
Reverse Voltage: 20 ~ 60 Volts
Forward Current: 8 A
Features:
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds enviromental standards of MIL-S-19500/228
Low leakage current
Mechanical Data:
Case: Molded plastic, G package (6.9mmx4.5mm)
Terminals: Solder plated, solderable per MIL-STD-750,
method 2026.
Polarity: Indicated by cathode band
Mounting position: Any
Approx. Weight: 0.00585 ounce, 0.195 gram
0.152(3.8)
0.144(3.6)
0.032(0.8) Typ.
0.040(1.0) Typ.
G package
0.283(7.2)
0.260(6.6)
0.012(0.3) Typ.
0.244(6.2)
0.228(5.8)
0.189(4.8)
0.165(4.2)
0.098(2.5)
0.075(1.9)
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
Maximum Ratings (at TA = 25oC unless otherwise noted)
Parameter
Symbol CDBG820-G CDBG830-G CDBG840-G CDBG850-G CDBG860-G Unit
Marking Code
SS82
SS83
SS84
SS85
SS86
Repetitive Peak Reverse Voltage
RMS voltage
Continuous reverse voltage
Maximum forward voltage
Max. Forward rectified current (See Fig.1)
Max. Forward surge current
8.3ms single half sine-wave superimposed
on rate load (JEDEC method)
Max. Reverse current
VR = VRRM TA = 25oC
VR = VRRM TA = 100oC
Thermal resistance
Junction Ambient
Diode junction capacitance
f=1MHz and applied 4vDC reverse Voltage
Max. Storage temperature
VRRM
VRMS
VR
VF
IO
IFSM
IR
RJA
Cj
TSTG
20
14
20
30
21
30
0.55
40
28
40
8.0
150
1.0
50
55
700
+150
50 60
35 42
50 60
0.70
V
V
V
V
A
A
mA
oC/ W
pF
oC
Operating temperature
-55 to +125
oC
www.comchiptech.com
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CDBG820-G.PDF ] | |
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