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HBNP3946S6R PDF даташит

Спецификация HBNP3946S6R изготовлена ​​​​«Cystech Electonics» и имеет функцию, называемую «General Purpose NPN / PNP Epitaxial Planar Transistors».

Детали детали

Номер произв HBNP3946S6R
Описание General Purpose NPN / PNP Epitaxial Planar Transistors
Производители Cystech Electonics
логотип Cystech Electonics логотип 

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HBNP3946S6R Даташит, Описание, Даташиты
CYStech Electronics Corp.
Spec. No. : C902S6R
Issued Date : 2003.03.18
Revised Date :
Page No. : 1/5
General Purpose NPN / PNP Epitaxial Planar Transistors
(dual transistors)
HBNP3946S6R
Features
Includes a 2N3904 chip and 2N3906 chip in a SOT-363R package.
Mounting possible with SOT-323 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
Equivalent Circuit
HBNP3946S6R
SOT-363R
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
TR1 (NPN)
TR2 (PNP)
60 -40
40 -40
6 -5
200 -200
300(total) *1
150
-55~+150
Note: *1 200mW per element must not be exceeded.
Unit
V
V
V
mA
mW
°C
°C
HBNP3946S6R
CYStek Product Specification









No Preview Available !

HBNP3946S6R Даташит, Описание, Даташиты
CYStech Electronics Corp.
Spec. No. : C902S6R
Issued Date : 2003.03.18
Revised Date :
Page No. : 2/5
Characteristics (Ta=25°C)
TR1 (NPN)
Symbol
Min.
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
VCE(sat)
VCE(sat)
hFE
hFE
hFE
hFE
*hFE
fT
Cob
60
40
6
-
-
-
-
-
40
70
100
60
30
300
-
TR2 (PNP)
Symbol
Min.
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
VCE(sat)
*VCE(sat)
hFE
hFE
hFE
hFE
*hFE
fT
Cob
-40
-40
-5
-
-
-
-
-
60
80
100
60
30
300
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
50
100
0.2
0.3
-
-
300
-
-
-
4
Max.
-
-
-
-100
-50
-100
-0.25
-0.4
-
300
-
-
-
4.5
Unit
V
V
V
nA
nA
nA
V
V
-
-
-
-
-
MHz
pF
Test Conditions
IC=10uA
IC=1mA
IE=10uA
VCB=50V
VCE=30V,VEB=3V
VEB=5V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=1V, IC=100uA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Unit
V
V
V
nA
nA
nA
V
V
-
-
-
-
-
MHz
pF
Test Conditions
IC=-10uA
IC=-1mA
IE=-10uA
VCB=-30V
VCE=-30V,VEB=-3V
VEB=-4V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-1V, IC=-100uA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-5V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HBNP3946S6R
CYStek Product Specification









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HBNP3946S6R Даташит, Описание, Даташиты
CYStech Electronics Corp.
Characteristic curves
TR1 (NPN)
Spec. No. : C902S6R
Issued Date : 2003.03.18
Revised Date :
Page No. : 3/5
Current Gain vs Collector Current
1000
HFE@VCE=1V
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100 100
10
0.1
1 10 100
Collector Current ---IC(mA)
1000
10000
Saturation Voltage vs Collector Current
VBE(SAT)@IC=10IB
1000
10
0.1
1 10 100
Collector Current---IC(mA)
1000
10000
Cutoff Frequency vs Collector Current
VCE=20V
1000
100
0.1
1 10 100
Collector Current ---IC(mA)
1000
100
1
10
Collector Current---IC(mA)
100
HBNP3946S6R
CYStek Product Specification










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