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PDF NE5510279A Data sheet ( Hoja de datos )
| Número de pieza | NE5510279A | |
| Descripción | 3.5V OPERATION SILICON RF POWER MOSFET | |
| Fabricantes | NEC | |
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3.5 V OPERATION SILICON RF
POWER MOSFET FOR GSM1800 NE5510279A
TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER:
32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA,
f = 1.8 GHz, PIN = 25 dBm
• HIGH POWER ADDED EFFICIENCY:
45% TYP at VDS = 3.5 V, IDQ = 400 mA,
f = 1.8 GHz, PIN = 25 dBm
• HIGH LINEAR GAIN:
10 dB TYP at VDS = 3.5 V, IDQ = 400 mA,
f = 1.8 GHz, PIN = 10 dBm
• SURFACE MOUNT PACKAGE:
5.7 x 5.7 x 1.1 mm MAX
• SINGLE SUPPLY:
2.8 to 6.0 V
OUTLINE DIMENSIONS (Units in mm)
Gate
PACKAGE OUTLINE 79A
4.2 Max
Source
Drain
Gate
1.5 ± 0.2
Source
Drain
0.4 ± 0.15
5.7 Max
0.8 Max
3.6 ± 0.2
Bottom View
DESCRIPTION
The NE5510279A is an N-Channel silicon power MOSFET
specially designed as the transmission power amplifier for
3.5 V GSM1800 handsets. Dies are manufactured using NEC's
NEWMOS technology (NEC's 0.6 µm WSi gate lateral
MOSFET) and housed in a surface mount package. This de-
vice can deliver 32 dBm output power with 45% power added
efficiency at 1.8 GHz under the 3.5 V supply voltage, or can
deliver 31 dBm output power at 2.8 V by varying the gate
voltage as a power control function.
APPLICATIONS
• DIGITAL CELLULAR PHONES
• OTHERS
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
CHARACTERISTICS
UNITS MIN
IGSS Gate to Source Leakage Current
nA -
IDSS Drain to Source Leakage Current nA -
VTH Gate Threshold Voltage
V 1.0
gm Transconductance
S-
RDS(ON) Drain to Source On Resistance
--
BVDSS
Drain to Source Breakdown Voltage
V
20
TYP
-
-
1.35
1.50
0.27
24
MAX
100
100
2.0
-
-
-
NE5510279A
79A
TEST CONDITIONS
VGSS = 6.0 V
VDSS = 8.5 V
VDS = 4.8 V, IDS = 1 mA
VDS = 4.8 V, IDS1 = 500 mA, IDS2 = 700 mA
VGS = 6.0 V, VDS = 0.5 V
IDSS = 10 A
California Eastern Laboratories
1 page  
RECOMMENDED P.C.B. LAYOUT (Units in mm)
4.0
1.7
Drain
Gate
Source
0.5
Through hole φ 0.2 × 33
0.5
6.1
NE5510279A
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
07/05/2000
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