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PDF NE5511279A Data sheet ( Hoja de datos )
| Número de pieza | NE5511279A | |
| Descripción | 7.5 V UHF BAND RF POWER SILICON LD-MOS FET | |
| Fabricantes | NEC | |
| Logotipo |  |
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NEC'S 7.5 V UHF BAND NE5511279A
RF POWER SILICON LD-MOS FET
FEATURES
• HIGH OUTPUT POWER:
Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V,
Pout = 40.5 dBm TYP., f = 460 MHz, VDS = 7.5 V,
• HIGH POWER ADDED EFFICIENCY:
ηadd = 48% TYP., f = 900 MHz, VDS = 7.5 V,
ηadd = 50% TYP., f = 460 MHz, VDS = 7.5 V,
• HIGH LINEAR GAIN:
GL = 15.0 dB TYP., f = 900 MHz, VDS = 7.5 V,
GL = 18.5 dB TYP., f = 460 MHz, VDS = 7.5 V,
• SURFACE MOUNT PACKAGE:
5.7 x 5.7 x 1.1 mm MAX
• SINGLE SUPPLY:
VDS = 2.8 to 8.0 V
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
4.2 MAX.
Source
(Bottom View)
1.5±0.2
Source
Gate
Drain
Gate
Drain
0.4±0.15
5.7 MAX.
0.8 MAX.
3.6±0.2
APPLICATIONS
• UHF RADIO SYSTEMS
• CELLULAR REPEATERS
• TWO-WAY RADIOS
• FRS/GMRS
• FIXED WIRELESS
DESCRIPTION
NEC's NE5511279A is an N-Channel silicon power laterally
diffused MOSFET specially designed as the transmission
power amplifier for 7.5 V radio systems. Die are manu-
factured using NEC's NEWMOS1 technology and housed in
a surface mount package. This device can deliver 40.0 dBm
output power with 48% power added efficiency at 900 MHz
using a 7.5 V supply voltage.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOL
PARAMETER
MIN
TYP
MAX UNIT
TEST CONDITIONS
Pout
ID
ηadd
GL
Pout
ID
ηadd
GL
IGSS
IDSS
Vth
Rth
gm
BVDSS
Output Power
Drain Current
Power Added Efficiency
Linear Gain
Output Power
Drain Current
Power Added Efficiency
Linear Gain
Gate to Source Leak Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Thermal Resistance
Transconductance
Drain to Source Breakdown Voltage
38.5
−
42
−
−
−
−
−
−
−
1.0
−
−
20
40.0
2.5
48
15.0
40.5
2.75
50
18.5
−
−
1.5
5
2.3
24
−
−
−
−
−
−
−
−
100
100
2.0
−
−
−
dBm
A
%
dB
dBm
A
%
dB
nA
f = 900 MHz, VDS = 7.5 V,
Pin = 27 dBm,
IDSQ = 400 mA (RF OFF)
Pin = 5 dBm
f = 460 MHz, VDS = 7.5 V,
Pin = 25 dBm,
IDSQ = 400 mA (RF OFF)
Pin = 5 dBm
VGS = 6.0 V
nA VDS = 8.5 V
V VDS = 4.8 V, IDS = 1.5 mA
°C/W Channel to Case
S VDS = 3.5 V, IDS = 900 mA
V IDSS = 15 µA
Notes:
DC performance is 100% tested. RF performance is tested on several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
California Eastern Laboratories
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