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NSQA12VAW5T2 PDF даташит

Спецификация NSQA12VAW5T2 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Low Capacitance Quad Array».

Детали детали

Номер произв NSQA12VAW5T2
Описание Low Capacitance Quad Array
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NSQA12VAW5T2 Даташит, Описание, Даташиты
NSQA6V8AW5T2 Series
Low Capacitance
Quad Array for
ESD Protection
This integrated transient voltage suppressor device (TVS) is
designed for applications requiring transient overvoltage protection. It
is intended for use in sensitive equipment such as computers, printers,
business machines, communication systems, medical equipment, and
other applications. Its integrated design provides very effective and
reliable protection for four separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
Features
ESD Protection: IEC61000−4−2: Level 4
MILSTD 883C − Method 3015−6: Class 3
Four Separate Unidirectional Configurations for Protection
Low Leakage Current < 1 mA
Power Dissipation: 380 mW
Small SC−88A SMT Package
Low Capacitance
Pb−Free Package is Available
Benefits
Provides Protection for ESD Industry Standards: IEC 61000, HBM
Protects the Line Against Transient Voltage Conditions in Either
Direction
Minimize Power Consumption of the System
Minimize PCB Board Space
Typical Applications
Instrumentation Equipment
Serial and Parallel Ports
Microprocessor Based Equipment
Notebooks, Desktops, Servers
Cellular and Portable Equipment
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2
34
SC−88A/SOT−323
CASE 419A
MARKING DIAGRAM
45
6x
1 23
x = H for NSQA6V8AW5T2
X for NSQA12VAW5T2
D = One Digit Date Code
ORDERING INFORMATION
Device
Package
Shipping
NSQA6V8AW5T2 SC−88A 3000/Tape & Reel
NSQA6V8AW5T2G SC−88A 3000/Tape & Reel
(Pb−Free)
NSQA12VAW5T2 SC−88A 3000/Tape & Reel
NSQA12VAW5T2G SC−88A 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
November, 2004 − Rev. 3
1
Publication Order Number:
NSQA6V8AW5T2/D









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NSQA12VAW5T2 Даташит, Описание, Даташиты
NSQA6V8AW5T2 Series
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Power Dissipation
8 20 msec Double Exponential Waveform (Note 1)
PPK 20 W
Steady State Power − 1 Diode (Note 2)
Thermal Resistance −
Junction−to−Ambient
Above 25°C, Derate
PD
RqJA
380 mW
327 °C/W
3.05 mW/°C
Operating Junction Temperature Range
TJ
−40 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Lead Solder Temperature − Maximum 10 Seconds Duration
TL 260 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 1.
2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR4 board with min pad.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
NSQA6V8AW5T2
Characteristic
Symbol
Min
Typ
Max Unit
Breakdown Voltage (IT = 1 mA) (Note 3)
Leakage Current (VRWM = 5.0 V)
Clamping Voltage 1 (IPP = 1.6 A, 8 20 msec Waveform)
Maximum Peak Pulse Current (8 20 msec Waveform)
Junction Capacitance − (VR = 0 V, f = 1 MHz)
− (VR = 3.0 V, f = 1 MHz)
VBR 6.4 6.8 7.1 V
IR
− 1.0 mA
VC
− 13 V
IPP
− 1.6 A
CJ − 12 15 pF
− 6.7 9.5
NSQA12VAW5T2
Breakdown Voltage (IT = 5 mA) (Note 3)
Leakage Current (VRWM = 9.0 V)
Zener Impedence (IT = 5 mA)
Clamping Voltage 1 (IPP = 0.9 A, 8 20 msec Waveform)
Maximum Peak Pulse Current (8 20 msec Waveform)
Junction Capacitance − (VR = 0 V, f = 1 MHz)
3. VBR is measured at pulse test current IT.
VBR 11.4 12.0 12.7 V
IR
− 0.05 mA
ZZ
− 30 W
VC
− 23 V
IPP
− 0.9 A
CJ
− 15 pF
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NSQA12VAW5T2 Даташит, Описание, Даташиты
100
10
1
1
NSQA6V8AW5T2 Series
10 100
t, TIME (ms)
Figure 1. Pulse Width
1000
110
100
90
80
70
60
50
40
30
20
10
0
0
25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C)
Figure 2. Power Derating Curve
150
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
−60 −40
−20 0 20 40 60
T, TEMPERATURE (°C)
80 100
Figure 3. Reverse Leakage versus
Temperature
14
12
10
8
6
4
2
0
0
TA = 25°C
6V
12 V
1 234
BIAS VOLTAGE (V)
Figure 4. Capacitance
5
6
100
tr
90
80
70
60
50
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE IRSM/2 @ 20 ms
40
30
tP
20
10
0
0
20 40 60
t, TIME (ms)
80
Figure 5. 8 × 20 ms Pulse Waveform
1
0.1
0.01
0.001
0.6
TA = 25°C
0.8 1.0 1.2 1.4 1.6
VF, FORWARD VOLTAGE (V)
Figure 6. Forward Voltage
1.8
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Номер в каталогеОписаниеПроизводители
NSQA12VAW5T2Low Capacitance Quad ArrayON Semiconductor
ON Semiconductor

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