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NTD65N03R PDF даташит

Спецификация NTD65N03R изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTD65N03R
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTD65N03R Даташит, Описание, Даташиты
NTD65N03R
Power MOSFET
25 V, 65 A, Single N−Channel, DPAK
Features
Low RDS(on)
Ultra Low Gate Charge
Low Reverse Recovery Charge
Pb−Free Packages are Available
Applications
Desktop CPU Power
DC−DC Converters
High and Low Side Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (RqJC) Limited
by Die
TC = 25°C
TC = 85°C
VDSS
VGS
ID
25
"20
65
45
V
V
A
Continuous Drain
Steady TC = 25°C
Current (RqJC) Limited State
by Wire
ID
32 A
Power Dissipation
(RqJC)
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
TC = 25°C
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
PD
ID
PD
ID
PD
50 W
11.4 A
8.9
1.88 W
9.5 A
7.4
1.3 W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage
Temperature
IDM
TJ, Tstg
130
−55 to
175
A
°C
Drain−to−Source (dv/dt)
dv/dt
2.0 V/ns
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V, IL = 12 A,
L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS
EAS
TL
2.1 A
71.7 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.15 in sq) [1 oz] including traces.
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V(BR)DSS
25 V
RDS(on) TYP
6.5 mW @ 10 V
9.7 mW @ 4.5 V
N−Channel
D
ID MAX
65 A
G
S
44
4
12
3
CASE 369AA
DPAK
(Bend Lead)
STYLE 2
1
2
3
CASE 369D
DPAK
(Straight Lead)
STYLE 2
1 23
CASE 369AC
3 IPAK
(Straight Lead)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
1
Gate
2
Drain
3
Source
13
Gate 2 Source
Drain
Y = Year
WW = Work Week
65N03 = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 3
1
Publication Order Number:
NTD65N03R/D









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NTD65N03R Даташит, Описание, Даташиты
NTD65N03R
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 4)
Symbol
RqJC
RqJA
RqJA
Value
2.5
80
115
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
VGS = 0 V, ID = 250 mA
25
29.5
V(BR)DSS/TJ
19.2
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 20 V
TJ = 25°C
TJ = 125°C
1.5
10
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = "20 V
"100
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.0
1.74
2.0
Negative Threshold Temperature Coefficient VGS(TH)/TJ
4.8
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 30 A
6.5 8.4
VGS = 4.5 V, ID = 30 A
9.7 14.6
Forward Transconductance
gFS VDS = 15 V, ID = 15 A
27
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0 V, f = 1.0 MHz,
VDS = 20 V
1177
555
218
1400
Total Gate Charge
QG(TOT)
12.2 16
Threshold Gate Charge
Gate−to−Source Charge
QG(TH)
QGS
VGS = 5.0 V, VDS = 10 V,
ID = 30 A
1.5
2.95
Gate−to−Drain Charge
QGD
6.08
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
td(on)
6.3
Rise Time
Turn−Off Delay Time
tr
td(off)
VGS = 10 V, VDS = 25 V,
ID = 30 A, RG = 3.0 W
18.6
20.3
Fall Time
tf
8.8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 20 A
TJ = 125°C
0.85 1.1
0.72
Reverse Recovery Time
tRR
28.8
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = 20 A
12.8
16
Reverse Recovery Time
QRR
20
PACKAGE PARASITIC VALUES
Source Inductance
LS
2.49
Drain Inductance
Gate Inductance
LD
LG
TA= 25°C
0.02
3.46
Gate Resistance
RG
1.75
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.15 in sq [1 oz] including traces).
5. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.
Unit
V
mV/°C
mA
nA
V
mV/°C
mW
mHos
pF
nC
ns
V
ns
nC
nH
W
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NTD65N03R Даташит, Описание, Даташиты
NTD65N03R
140
120
100
80
60
40
20
0
0
10 V
7V
6V
5.5 V
5V
TJ = 25°C
4.5 V
4.2 V
4V
3.8 V
3.6 V
3.4 V
3.2 V
3V
2.8 V
2468
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
10
140
VDS 10 V
120
100
80
60
40
TJ = 125°C
20 TJ = 25°C
0 TJ = −55°C
012345
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
6
0.03
0.026
VGS = 10 V
0.03
0.026
VGS = 4.5 V
0.022
0.022
0.018
0.014
0.01
0.006
0.002
0
20 40
TJ = 150°C
TJ = 125°C
TJ = 25°C
TJ = −55°C
60 80 100 120 140
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.018
TJ = 150°C
0.014
0.01
0.006
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.002
0
20 40 60 80 100 120 140
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain Current
and Temperature
1.6
ID = 30 A
VGS = 10 V
1.4
1.2
1.0
0.8
10000
VGS = 0 V
TJ = 150°C
1000
TJ = 125°C
0.6
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100
150 0
4 8 12 16
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
20
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NTD65N03RPower MOSFET ( Transistor )ON Semiconductor
ON Semiconductor

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