IRLR3715PBF PDF даташит
Спецификация IRLR3715PBF изготовлена «International Rectifier» и имеет функцию, называемую «SMPS MOSFET». |
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Детали детали
Номер произв | IRLR3715PBF |
Описание | SMPS MOSFET |
Производители | International Rectifier |
логотип |
10 Pages
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PD - 95555A
SMPS MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
VDSS
20V
IRLR3715PbF
IRLU3715PbF
HEXFET® Power MOSFET
RDS(on) max
14mΩ
ID
54A
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
D-Pak
IRLR3715
I-Pak
IRLU3715
Max.
20
± 20
54
38
210
71
3.8
0.48
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Typ.
–––
–––
–––
Max.
2.1
110
50
Units
°C/W
Notes through
are on page 10
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1
12/6/04
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IRLR/U3715PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
20
–––
–––
–––
1.0
–––
–––
–––
–––
––– –––
0.022 –––
11 14
15 20
––– 3.0
––– 20
––– 100
––– 200
––– -200
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ
VGS = 10V, ID = 26A
VGS = 4.5V, ID = 21A
V VDS = VGS, ID = 250µA
µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
nA
VGS = 16V
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
26 ––– ––– S VDS = 10V, ID = 21A
Qg Total Gate Charge
––– 11 17
ID = 21A
Qgs Gate-to-Source Charge
––– 3.8 ––– nC VDS = 10V
Qgd Gate-to-Drain ("Miller") Charge
––– 4.4 –––
VGS = 4.5V
Qoss
Output Gate Charge
––– 11 17
VGS = 0V, VDS = 10V
td(on)
Turn-On Delay Time
––– 6.4 –––
VDD = 10V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 73 ––– ns ID = 21A
––– 12 –––
RG = 1.8Ω
tf Fall Time
––– 5.1 –––
VGS = 4.5V
Ciss Input Capacitance
––– 1060 –––
VGS = 0V
Coss Output Capacitance
––– 700 –––
VDS = 10V
Crss Reverse Transfer Capacitance
––– 120 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
110
21
Units
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
––– 54
––– 210
A
0.9 1.3
0.8 –––
37 56
28 42
38 57
30 45
V
ns
nC
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 21A, VGS = 0V
TJ = 125°C, IS = 21A, VGS = 0V
TJ = 25°C, IF = 21A, VR=20V
di/dt = 100A/µs
TJ = 125°C, IF = 21A, VR=20V
di/dt = 100A/µs
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IRLR/U3715PbF
1000
100
VGS
TOP 15V
10V
4.5V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
10
2.5V
1
0.1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP 15V
10V
4.5V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
10 2.5V
20µs PULSE WIDTH
1 TJ = 175 °C
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 25° C
TJ = 175° C
10
2.0
V DS= 15V
20µs PULSE WIDTH
3.0 4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
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2.5 ID = 52A
2.0
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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Номер в каталоге | Описание | Производители |
IRLR3715PBF | SMPS MOSFET | International Rectifier |
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