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PDF NS2029M3T5G Data sheet ( Hoja de datos )

Número de pieza NS2029M3T5G
Descripción PNP Silicon General Purpose Amplifier Transistor
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NS2029M3T5G
PNP Silicon General
Purpose Amplifier Transistor
This PNP transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-723 package which is
designed for low power surface mount applications, where board
space is at a premium.
ăReduces Board Space
ăHigh hFE, 210ā-ā460 (Typical)
ăLow VCE(sat), < 0.5 V
ăESD Performance: Human Body Model; u 2000 V,
Machine Model; u 200 V
ăAvailable in 4 mm, 8000 Unit Tape & Reel
ăThis is a Pb-Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
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Collector-Base Voltage
V(BR)CBO
Collector-Emitter Voltage
V(BR)CEO
Emitter-Base Voltage
V(BR)EBO
Collector Current - Continuous
IC
THERMAL CHARACTERISTICS
-60
-50
-6.0
-100
Vdc
Vdc
Vdc
mAdc
Rating
Symbol Max Unit
Power Dissipation (Note 1)
PD 265 mW
Junction Temperature
TJ 150 °C
Storage Temperature Range
Tstg
-ā55 ~ +ā150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
http://onsemi.com
PNP GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
COLLECTOR
3
1
BASE
2
EMITTER
MARKING
DIAGRAM
3
SOT-723
CASE 631AA
2
1
9F M
9F = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
NS2029M3T5G
SOT-723 8000/Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2007
May, 2007 - Rev. 0
1
Publication Order Number:
NS2029M3/D

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