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PDF NE662M04 Data sheet ( Hoja de datos )
| Número de pieza | NE662M04 | |
| Descripción | NPN SILICON HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | CEL | |
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NPN SILICON RF TRANSISTOR
NE662M04
NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH: fT = 25 GHz
• LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz
• HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz
• NEW LOW PROFILE M04 PACKAGE:
• SOT-343 footprint, with a height of just 0.59 mm
• Flat Lead Style for better RF performance
M04
DESCRIPTION
NEC's NE662M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the
NE662M04 is usable in applications from 100 MHz to 10 GHz. The NE662M04 provides excellent low voltage/low current
performance.
NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NE662M04 is an ideal choice
for LNA and oscillator requirements in all mobile communication systems.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
NE662M04
2SC5508
M04
SYMBOLS
ICBO
IEBO
hFE
fT
MAG
MSG
|S21E|2
NF
P1dB
IP3
Cre
PARAMETERS AND CONDITIONS
Collector Cutoff Current at VCB = 5V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Forward Current Gain2 at VCE = 2 V, IC = 5 mA
Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz
Maximum Available Power Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz
Maximum Stable Gain5 at VCE = 2 V, IC = 20 mA, f = 2 GHz
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT
Output Power at 1 dB compression point at
VCE = 2 V, IC = 20 mA, f = 2 GHz
Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz
Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz
UNITS
nA
nA
GHz
dB
dB
dB
dB
dBm
pF
MIN
50
20
14
TYP MAX
200
200
70 100
25
20
20
17
1.1 1.5
11
22
0.18 0.24
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
( )4. MAG = S21
S12
K- (K2 -1)
5. MSG = S21
S12
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 22, 2005
1 page  
TYPICAL PERFORMANCE CURVES (TA = 25˚C)
FORWARD INSERTION GAIN
vs. FREQUENCY
30
VCE = 2 V,
IC = 20 mA
20
VCE = 2 V,
IC = 5 mA
10
0
0.1
12
10 12
Frequency, f (GHz)
FORWARD INSERTION GAIN AND
MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
40
VCE = 2 V, IC = 20 mA
30
MSG
20
IS21I2
MAG
10
0
0.1
12
10
Frequency, f (GHz)
MAXIMUM STABLE GAIN, INSERTION
POWER GAIN, MAXIMUM AVAILABLE
GAIN vs. COLLECTOR CURRENT
30.00
f = 1 GHz, VCE = 2 V
25.00
MSG
MAG
20.00
IS21I 2
15.00
10.00
5.00
0.00
1
10
Collector Current, IC (mA)
100
NE662M04
FORWARD INSERTION GAIN AND
MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
40
VCE = 2 V, IC = 5 mA
30
MSG
20
IS21I2
MAG
10
0
0.1
12
10
Frequency, f (GHz)
MAXIMUM STABLE GAIN, INSERTION
POWER GAIN, MAXIMUM AVAILABLE
GAIN vs. COLLECTOR CURRENT
30.00
f = 2 GHz, VCE = 2 V
25.00
20.00
MAG
MSG
15.00
IS21I 2
10.00
5.00
0.00
1
10
Collector Current, IC (mA)
100
5 Page 
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Lead (Pb)
Mercury
Cadmium
Hexavalent Chromium
PBB
PBDE
Concentration Limit per RoHS
(values are not yet fixed)
< 1000 PPM
< 1000 PPM
< 100 PPM
< 1000 PPM
< 1000 PPM
< 1000 PPM
Concentration contained
in CEL devices
-A
Not Detected
-AZ
(*)
Not Detected
Not Detected
Not Detected
Not Detected
Not Detected
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
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