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PDF NE685 Data sheet ( Hoja de datos )
| Número de pieza | NE685 | |
| Descripción | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | NEC | |
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SURFACE MOUNT NPN SILICON NE685
HIGH FREQUENCY TRANSISTOR SERIES
FEATURES
• LOW COST
• SMALL AND ULTRA SMALL SIZE PACKAGES
• LOW VOLTAGE/LOW CURRENT OPERATION
• HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz
• NOISE FIGURES OF 1.5 dB AT 2.0 GHZ
18 (SOT 343 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
PTLhEeAfSoEl l oNwOdiTnaEgt :apsahretent uamr ebdenerossti g n .DESCRIPTION
NEC's family of high frequency, low cost, surface mount
t h i s f o r n e w f o rdevices are well suited for portable wireless communications
and cellular radio applications.
f r o m e n d e d o f f i c eThe NE685 series of high fT (12 GHz) devices is suitable for
r e c o m m c a l l s a l e svery low voltage/low current, low noise applications. These
products are ideal for applications up to 2.4 GHz where low
cost, high gain, low voltage, and low current are prime con-
cerns.
Pdleetaasiel s :ELECTRICAL CHARACTERISTICS (TA = 25°C)
N E 6 8 5 3 9 RPART NUMBER1
EIAJ2 REGISTERED NUMBER
PACKAGE OUTLINE
NE68518
2SC5015
18
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
NE68519
2SC5010
19
NE68530
2SC4959
30
NE68533
2SC4955
33
NE68539/39R
2SC4957
39
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
fT
NFMIN
GNF
MAG
|S21E|2
hFE
ICBO
IEBO
CRE4
Gain Bandwidth Product at
VCE = 3V, IC = 10 mA, f = 2.0 GHz
Minimum Noise Figure at
VCE = 3 V, IC = 3 mA, f = 2.0 GHz
Associated Gain at
VCE = 3V, IC = 3 mA, f = 2.0 GHz
Maximum Available Gain at
VCE = 3 V, IC = 10 mA, f = 2.0 GHz
Insertion Power Gain at
VCE = 3V, IC =10 mA, f = 2.0 GHz
Forward Current Gain3 at
VCE = 3 V, IC = 10 mA
Collector Cutoff Current
at VCB = 5 V, IE = 0 mA
Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA
Feedback Capacitance at
VCB = 3 V, IE = 0 mA, f = 1 MHz
GHz
12
12
12
12
12
dB 1.5 2.5 1.5 2.5 1.5 2.5 1.5 2.5 1.5 2.5
dB 8.5
7.5
7
7 7.5
dB 12 11 10 10.5 11
dB 9 11
79
7 8.5
78
9 10
75 110 150 75 110 150 75 110 150 75 110 150 75 110 150
µA 0.1 0.1 0.1 0.1 0.1
µA 0.1 0.1 0.1 0.1 0.1
pF 0.3 0.5 0.4 0.7 0.4 0.7 0.4 0.7 0.3 0.5
PT Total Power Dissipation
mW 150 125 150 180 180
RTH(J-A) Thermal Resistance
(Junction to Ambient)
°C/W
833
1000
833
620
620
RTH(J-C) Thermal Resistance(Junction to Case) °C/W
200
200
200
200
200
Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW≤350 µs, duty cycle ≤2%.
4. The emitter terminal should be connected to the ground terminal
of the 3 terminal capacitance bridge.
California Eastern Laboratories
1 page  
NE685 SERIES
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
.4
.2
.8 1
.6
1.5
2
S22
4 GHz
3
4
5
0 .2 .4 .6 .8 1
S11
4 GHz
-.2
-.4
NE68518
-.6
-.8
VCE = 0.5 V, IC = 0.5 mA
-1
1.5 2
S22 10
0.1 GHz 20
3 4 5 10 20
S11
0.1 GHz
-20
-10
-5
-4
-3
-2
-1.5
FREQUENCY
S11
S21
Coordinates in Ohms
Frequency in GHz
(VCE = 2.5 V, IC = 1 mA)
S12
135˚
90˚
45˚
180˚ S21
4 GHz
225˚
S12
0.1 GHz
.05 .010 .015.020 .025
1
S21
0.1 GHz S12
2 4 GHz
0˚
3 315˚
270˚
S22 K MAG1
GHz
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
MAG
0.995
0.941
0.844
0.783
0.644
0.542
0.469
0.421
ANG
-7.200
-29.200
-56.800
-69.300
-99.500
-126.400
-152.900
-179.100
MAG
1.819
1.756
1.619
1.530
1.331
1.163
1.054
0.965
ANG
170.500
148.100
119.000
106.100
77.200
53.400
32.400
14.800
MAG
0.030
0.107
0.193
0.225
0.263
0.279
0.280
0.283
ANG
88.600
67.200
45.300
35.800
15.800
-0.100
-13.000
-23.900
MAG
0.997
0.969
0.893
0.853
0.750
0.675
0.629
0.582
ANG
-3.900
-22.000
-42.700
-51.500
-69.200
-84.400
-96.600
-108.400
0.024
0.168
0.331
0.410
0.610
0.792
0.952
1.097
(dB)
17.827
12.151
9.237
8.325
7.042
6.200
5.757
3.431
VCE = 1.0 V, IC = 1.0 mA
0.1 0.985 -8.500
0.4 0.917 -32.500
0.8 0.771 -62.700
1.0 0.696 -76.000
1.5 0.536 -105.900
2.0 0.430 -133.000
2.5 0.361 -160.200
3.0 0.310 173.400
4.0 0.303 116.300
VCE = 2.5 V, IC = 1.0 mA
0.1 0.986 -7.100
0.4 0.926 -29.800
0.8 0.799 -57.100
1.0 0.728 -69.600
1.5 0.573 -98.500
2.0 0.455 -123.900
2.5 0.364 -150.100
3.0 0.311 -174.900
4.0 0.270 124.900
3.481
3.293
2.879
2.653
2.160
1.798
1.559
1.385
1.173
169.900
146.500
117.800
105.300
78.600
56.600
37.700
21.000
-10.100
3.465
3.301
2.949
2.743
2.275
1.921
1.664
1.471
1.252
170.500
148.800
121.700
109.700
83.400
61.500
42.300
25.900
-5.200
0.023
0.086
0.144
0.165
0.191
0.210
0.214
0.229
0.255
82.400
66.300
44.100
35.500
21.800
7.200
-0.900
-7.500
-20.700
0.018
0.063
0.116
0.139
0.161
0.180
0.189
0.196
0.226
83.900
67.000
47.000
39.100
24.100
11.100
4.400
-4.300
-11.500
0.985
0.956
0.847
0.789
0.675
0.601
0.554
0.513
0.436
-5.500
-24.300
-45.300
-53.300
-70.500
-83.800
-94.000
-104.500
-130.100
0.996
0.970
0.878
0.834
0.732
0.671
0.628
0.586
0.520
-4.400
-21.200
-39.900
-47.800
-63.800
-76.200
-85.500
-96.200
-118.800
0.108
0.172
0.347
0.440
0.634
0.831
0.998
1.118
1.253
21.800
15.831
13.009
12.063
10.534
9.326
8.624
5.724
3.601
0.103
0.174
0.345
0.419
0.610
0.789
0.944
1.102
1.207
22.844
17.193
14.052
12.952
11.502
10.283
9.447
6.805
4.685
VCE = 3.0 V, IC = 10 mA
0.1
0.759 -22.200
22.471 157.900
0.018
81.900
0.906 -15.600
0.205
30.963
0.4
0.451 -68.600
13.915 114.600
0.047
62.800
0.646 -40.900
0.597
24.714
0.8
0.249 -101.700
8.120 88.400
0.068
51.600
0.472 -51.300
0.890
20.770
1.0
0.184 -116.600
6.664 79.400
0.079
50.400
0.435 -55.200
0.965
19.261
1.5
0.111 -153.200
4.559 61.500
0.114
45.400
0.398 -63.600
1.024
15.071
2.0
0.080 169.100
3.474 46.300
0.143
39.500
0.382 -73.500
1.072
12.212
2.5
0.078 130.600
2.832 31.700
0.172
30.800
0.372 -80.700
1.094
10.294
3.0
0.084 95.900
2.402 18.900
0.203
21.100
0.367 -90.700
1.100
8.809
4.0
0.149 68.500
1.921 -6.500
0.268
2.500
0.311 -112.900
1.080
6.829
5.0
0.282 46.400
1.635 -32.300
0.322
-17.000
0.208 -155.700
1.070
5.438
Note: 1. Gain Calculations:
( ).MAG = |S21| K ± K 2 - 1 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | ∆ | 2 - |S11| 2 - |S22| 2 , ∆ = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
5 Page 
NE68519 NONLINEAR MODEL
NE685 SERIES
SCHEMATIC
Base
LBX
LB
CCBPKG
CCB
Q1
LCX
CCE
Collector
LE CCEPKG
LEX
Emitter
BJT NONLINEAR MODEL PARAMETERS (1)
Parameters
Q1
Parameters
Q1
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RE
RB
RBM
IRB
RC
CJE
VJE
MJE
CJC
VJC
7.0e-16
109
1
15
0.19
7.90e-13
2.19
1
1.08
12.4
Infinity
0
2
1.3
10
8.34
0.009
10
0.4e-12
0.81
0.5
0.18e-12
0.75
(1) Gummel-Poon Model
MJC
XCJC
CJS
VJS
MJS
FC
TF
XTF
VTF
ITF
PTF
TR
EG
XTB
XTI
KF
AF
0.34
0
0
0.75
0
0.5
2.0e-12
5.2
4.58
0.011
0
1.0e-9
1.11
0
3
0
1
UNITS
Parameter
time
capacitance
inductance
resistance
voltage
current
Units
seconds
farads
henries
ohms
volts
amps
ADDITIONAL PARAMETERS
Parameters
CCB
CCE
LB
LE
CCBPKG
CCEPKG
LBX
LCX
LEX
68519
0.13e-12
0.14e-12
0.9e-9
0.9e-9
0.17e-12
0.21e-12
0.19e-9
0.19e-9
0.19e-9
MODEL RANGE
Frequency: 0.05 to 3.0 GHz
Bias:
VCE = 0.5 V to 3.0 V, IC = 0.5 mA to 20 mA
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet NE685.PDF ] | |
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