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PDF NE685M23 Data sheet ( Hoja de datos )
| Número de pieza | NE685M23 | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | NEC | |
| Logotipo |  |
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PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE685M23
FEATURES
• NEW MINIATURE M23 PACKAGE:
– World's smallest transistor package footprint —
leads are completely underneath package body
– Low profile/0.55 mm package height
– Ceramic substrate for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 12 GHz
• LOW NOISE FIGURE:
NF = 1.5 dB at 2 GHz
DESCRIPTION
The NE685M23 transistor is designed for low noise, high gain,
and low cost requirements. This high fT part is well suited for
very low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/ceramic substrate style "M23" package is ideal for
today's portable wireless applications. The NE685 is also
available in six different low cost plastic surface mount pack-
age styles.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M23
0.5
1 0.25
0.4
2 3 0.25
0.6
0.15
0.2 0.15
BOTTOM VIEW
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
fT
NF
|S21E|2
hFE2
ICBO
IEBO
CRE3
PARAMETERS AND CONDITIONS
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz
Noise Figure at VCE = 3 V, IC = 10 mA, f = 2 GHz
Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 2 GHz
Forward Current Gain at VCE = 3 V, IC = 10 mA
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
UNITS
GHz
dB
dB
µA
µA
pF
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
NE685M23
2SC5652
M23
MIN TYP MAX
12
1.5 2.5
7 10
75 145
0.1
0.1
0.4 0.7
California Eastern Laboratories
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| PDF Descargar | [ Datasheet NE685M23.PDF ] | |
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