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PDF NE688M23 Data sheet ( Hoja de datos )
| Número de pieza | NE688M23 | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | NEC | |
| Logotipo |  |
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PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE688M23
FEATURES
• NEW MINIATURE M23 PACKAGE:
– World's smallest transistor package footprint —
leads are completely underneath package body
– Low profile/0.55 mm package height
– Ceramic substrate for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 9.5 GHz
• LOW NOISE FIGURE:
NF = 1.7 dB at 2 GHz
• HIGH COLLECTOR CURRENT:
IC MAX = 100 mA
DESCRIPTION
The NE688M23 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/ceramic substrate style "M23"
package is ideal for today's portable wireless applications. The
NE688 is also available in chip and six different low cost plastic
surface mount package styles.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M03
0.5
1 0.25
0.4
2 3 0.25
0.6
0.15
0.2 0.15
BOTTOM VIEW
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
fT
NF
|S21E|2
hFE2
ICBO
IEBO
CRE3
PARAMETERS AND CONDITIONS
Gain Bandwidth at VCE = 1 V, IC = 3 mA, f = 2 GHz
Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz
Insertion Power Gain at VCE = 1 V, IC = 3 mA, f = 2 GHz
Forward Current Gain at VCE = 1 V, IC = 3 mA
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz
UNITS
GHz
dB
dB
µA
µA
pF
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
NE688M23
2SC5651
M23
MIN TYP MAX
45
1.9 2.5
34
80 145
0.1
0.1
0.7 0.8
California Eastern Laboratories
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| PDF Descargar | [ Datasheet NE688M23.PDF ] | |
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