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PDF NE696M01 Data sheet ( Hoja de datos )
| Número de pieza | NE696M01 | |
| Descripción | NPN SILICON HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | CEL | |
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NEC's NPN SILICON HIGH NE696M01
FREQUENCY TRANSISTOR
FEATURES
• HIGH fT:
14 GHz TYP at 3 V, 10 mA
• LOW NOISE FIGURE:
NF = 1.6 dB TYP at 2 GHz
• HIGH GAIN:
|S21E|2 = 14 dB TYP at 2 GHz
• 6 PIN SMALL MINI MOLD PACKAGE
• EXCELLENT LOW VOLTAGE, LOW CURRENT
PERFORMANCE
DESCRIPTION
NEC's NE696M01 is an NPN high frequency silicon epitaxial
transistor (NE685) encapsulated in an ultra small 6 pin SOT-
363 package. Its four emitter pins decrease emitter inductance
resulting in 3 dB more gain compared to conventional SOT-23
and SOT-143 devices. The NE696M01 is ideal for LNA and
pre-driver applications up to 2.4 GHz where low cost, high gain,
low voltage and low current are prime considerations.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M01
TOP VIEW
2.1 ± 0.1
1.25 ± 0.1
0.65
2.0 ± 0.2
1.3
1
2
3
6
0.2 (All Leads)
5
4
SIDE VIEW
0.9 ± 0.1
0.7
0 ~ 0.1
+0.10
0.15 - 0.05
PIN OUT
1. Emitter
2. Emitter
3. Base
4. Emitter
5. Emitter
6. Collector
Note:
Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
ICBO
IEBO
hFE1
fT
Cre2
|S21E|2
NF
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Forward Current Gain at VCE = 3 V, IC = 10 mA
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz
Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz
µA
µA
GHz
pF
dB
dB
MIN
80
Notes:
1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
3. For Tape and Reel version use part number NE696M01-T1, 3K per reel.
NE696M01
M01
TYP
120
14
0.15
14
1.6
MAX
0.1
0.1
160
California Eastern Laboratories
1 page  
NE696M01
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
NE696M01
VCE = 3 V, IC = 5 mA
FREQUENCY
S11
S21 S12
S22 K MAG1
(GHz)
0.40
0.80
1.00
2.00
2.50
3.00
4.00
5.00
6.00
MAG
0.765
0.596
0.525
0.335
0.323
0.353
0.456
0.533
0.583
ANG
-43.9
-79.7
-94.2
-160.2
166.2
137.5
99.2
78.9
65.7
MAG
11.370
8.988
7.898
4.669
3.781
3.134
2.266
1.773
1.442
ANG
140.8
113.4
102.7
63.0
47.0
32.4
5.9
-18.6
-43.1
MAG
0.028
0.043
0.046
0.054
0.057
0.062
0.078
0.106
0.142
ANG
60.3
44.4
39.6
30.6
30.6
31.8
34.1
29.7
18.5
MAG
0.885
0.739
0.687
0.573
0.562
0.570
0.606
0.642
0.695
ANG
-25.1
-41.1
-46.5
-67.5
-76.6
-85.9
-104.5
-129.8
-164.2
0.299
0.506
0.627
1.159
1.352
1.422
1.312
1.053
0.823
(dB)
26.086
23.202
22.348
16.952
14.673
13.178
11.285
10.827
10.067
Note:
1. Gain Calculation:
( ).MAG = |S21| K ± K 2 - 1 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | ∆ | 2 - |S11| 2 - |S22| 2 , ∆ = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NE696M01.PDF ] | |
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