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NE698M01 PDF даташит

Спецификация NE698M01 изготовлена ​​​​«NEC» и имеет функцию, называемую «NPN EPITAXIAL SILICON TRANSISTOR».

Детали детали

Номер произв NE698M01
Описание NPN EPITAXIAL SILICON TRANSISTOR
Производители NEC
логотип NEC логотип 

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NE698M01 Даташит, Описание, Даташиты
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PRELIMINARY DATA SHEET
NPN EPITAXIAL SILICON
TRANSISTOR FOR MICROWAVE NE698M01
HIGH-GAIN AMPLIFICATION
FEATURES
• HIGH fT:
17 GHz TYP at 2 V, 7 mA
• LOW NOISE FIGURE:
NF = 1.1 dB TYP at f = 2 GHz, 2 V, 1 mA
• HIGH GAIN:
|S21E|2 = 15.5 dB TYP at f = 2 GHz
• 6 PIN SMALL MINI MOLD PACKAGE
• EXCELLENT LOW VOLTAGE,
LOW CURRENT PERFORMANCE
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M01
TOP VIEW
2.1 ± 0.1
1.25 ± 0.1
0.65
2.0 ± 0.2
1.3
1
2
3
6
0.2 (All Leads)
5
4
DESCRIPTION
The NE698M01 is an NPN high frequency silicon epitaxial
transistor (NE686) encapsulated in an ultra small 6 pin SOT-
363 package. Its four emitter pins decrease emitter inductance
resulting in 3 dB more gain compared to conventional SOT-23
and SOT-143 devices. The NE698M01 is ideal for LNA and
pre-driver applications up to 2.4 GHz where low cost, high gain,
low voltage and low current are prime considerations.
0.9 ± 0.1
0.7
0 ~ 0.1
PIN CONNECTIONS
1. Emitter 4. Emitter
2. Emitter 5. Emitter
3. Base
6. Collector
+0.10
0.15 - 0.05
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Note: Pin 3 is identified with a circle on the bottom of the package.
PART NUMBER
PACKAGE OUTLINE
NE698M01
M01
SYMBOLS
ICBO
IEBO
hFE1
fT
CRE2
|S21E|2
NF
PARAMETERS AND CONDITIONS
UNITS
Collector Cutoff Current at VCB = 5 V, IE = 0
µA
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
DC Current Gain at VCE = 2 V, IC = 7 mA
Gain Bandwidth Product at VCE = 2 V, IC=7mA, f = 2.0GHz GHz
Feedback Capacitance at VCB = 2 V, IE=0, f=1 MHz
pF
Insertion Power Gain at VCE = 2 V, IC = 7 mA, f = 2.0 GHz dB
Noise Figure at VCE = 2 V, IC = 1 mA, f = 2.0 GHz
dB
MIN
70
13
TYP
17
0.1
15.5
1.1
MAX
0.1
0.1
140
0.15
1.8
Notes:
1. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
California Eastern Laboratories









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NE698M01 Даташит, Описание, Даташиты
NE698M01
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
5
VCEO Collector to Emitter Voltage V
3
VEBO Emitter to Base Voltage
V
2
IC Collector Current
mA 10
PT Total Power Dissipation
mW
30
TJ Junction Temperature °C 150
TSTG Storage Temperature
°C -65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
ORDERING INFORMATION
PART NUMBER
ORDER MULTIPLE
NE698M01-T1
3000
PACKAGING
Tape & Reel
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
50
40
30 mW
30
20
10
0 50 100 150
Ambient Temperature, TA (°C) (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
20
200 µA
180 µA
15 160 µA
140 µA
120 µA
10 100 µA
80 µA
60 µA
5 40 µA
IB = 20 µA
0
1.0 2.0 3.0
Collector to Emitter Voltage, VCE (V)
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
50
VCE = 2 V
40
30
20
10
0 0.5 1.0
Base to Emitter Voltage, VBE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
100
50
20
10
1
VCE = 2 V
VCE = 1 V
2 5 10 20 30
Collector Current, IC (mA)









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NE698M01 Даташит, Описание, Даташиты
TYPICAL PERFORMANCE CURVES (TA = 25°C)
GAIN BANDWIDTH PRODUCT
vs. Ic CHARACTERISTICS
20 VCE = 2 V
f = 2 GHz
10
0
1 10 20
Collector Current, Ic (mA)
NOISE FIGURE vs.
Ic CHARACTERISTICS
4
VCE = 2 V
f = 2 GHz
3
2
1
0
1 10 20
Collector Current, Ic (mA)
INSERTION POWER GAIN vs.
FREQUENCY CHARACTERISTICS
40
VCE = 2 V
30
Ic = 7 mA
20
10
0
0.1
Ic = 1 mA
0.5 1.0
Frequency, f (GHz)
2.0 2.6
NE698M01
INSERTION POWER GAIN
vs. IC CHARACTERISTICS
18
VCE = 2 V
16 f = 2 GHz
14
12
10
8
6
4
2
0
1 10 20
Collector Current, Ic (mA)
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
0.3
f = 1 MHz
0.2
0.1
0
1 10 20
Collector to Base Voltage, VCB (V)










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NE698M01NPN EPITAXIAL SILICON TRANSISTORNEC
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