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PDF NE851M13 Data sheet ( Hoja de datos )
| Número de pieza | NE851M13 | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | CEL | |
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NEC's NPN SILICON TRANSISTOR NE851M13
FEATURES
• NEW MINIATURE M13 PACKAGE:
– Small transistor outline
– 1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
• IDEAL FOR ≤ 3 GHz OSCILLATORS
• LOW PHASE NOISE
• LOW PUSHING FACTOR
DESCRIPTION
NEC's NE851M13 transistor is designed for oscillator applica-
tions up to 3 GHz. The NE851M13 features low voltage
operation, low phase noise, and high immunty to pushing
effects. NEC's new low profile/flat lead style "M13" package is
ideal for today's portable wireless applications.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M13
0.7±0.05
0.5+ñ00..015
(Bottom View)
0.3
23
1
0.1 0.1 0.2 0.2
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
fT
fT
|S21E|2
|S21E|2
NF
CRE
ICBO
IEBO
hFE
Gain Bandwidth at VCE = 1 V, IC = 5 mA, f = 2 GHz
Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz
Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz
Insertion Power Gain at VCE = 1 V, IC = 15 mA, f = 2 GHz
Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz
Reverse Transfer Capacitance3 at VCB = 0.5 V, IE = 0 mA, f = 1 MHz
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain2 at VCE = 1 V, IC = 5 mA
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Collector to base capacitance when the emitter is grounded
UNITS
GHz
GHz
dB
dB
dB
pF
nA
nA
NE851M13
2SC5801
M13
MIN TYP MAX
3.0 4.5
5.0 6.5
–
3.0 4.0
4.5 5.5
–
–
– 1.9 2.5
– 0.6 0.8
– – 600
– – 600
100 120 145
California Eastern Laboratories
1 page  
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NOISE FIGURE and ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
VCE = 1 V
f = 1 GHz
5
Ga
18
15
4 12
39
26
1 NF 3
00
1 10 100
Collector Current, IC (mA)
NOISE FIGURE and ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
VCE = 1 V
f = 2 GHz
5
18
15
4 12
Ga
39
26
NF
13
00
1 10 100
Collector Current, IC (mA)
OUTPUT POWER AND
COLLECTOR CURRENT vs.
INPUT POWER
25
VCE = 2 V, f = 1 GHz
Icq = 5 mA (RF OFF)
20
15
10
Pout
5
0
-5
IC
-10
-15
-20
-15 -10 -5 0
5
Input Power, PIN (dBm)
80
70
60
50
40
30
20
10
0
10
NE851M13
NOISE FIGURE and ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
VCE = 2 V
f = 1 GHz
5
Ga
19
15
4 12
39
26
1 NF 3
00
1 10 100
Collector Current, IC (mA)
NOISE FIGURE and ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
VCE = 2 V
f = 2 GHz
5
18
15
4 12
Ga
39
2 NF 6
13
00
1 10 100
Collector Current, IC (mA)
OUTPUT POWER AND
COLLECTOR CURRENT vs.
INPUT POWER
25
VCE = 2 V, f = 2 GHz
Icq = 5 mA (RF OFF)
20
15
10
5
Pout
0
-5
-10
-15
-20
IC
-15 -10 -5 0 5
Input Power, PIN (dBm)
80
70
60
50
40
30
20
10
0
10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NE851M13.PDF ] | |
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