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PDF HMC605LP3 Data sheet ( Hoja de datos )
| Número de pieza | HMC605LP3 | |
| Descripción | GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE | |
| Fabricantes | Hittite Microwave | |
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HMC605LP3 / 605LP3E
v00.0407
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
5
Typical Applications
The HMC605LP3 / HMC605LP3E is ideal for:
• Wireless Infrastructure
• Fixed Wireless
• WiMAX & WiBro
• Tower Mounted Amplifiers
Features
Noise Figure: 1.0 dB
Output IP3: +31 dBm
Gain: 20 dB
Low Loss & Failsafe Bypass Path
Single Supply: +5.0V @ 74 mA
50 Ohm Matched Output
Functional Diagram
General Description
The HMC605LP3 / HMC605LP3E are versatile, high
dynamic range GaAs MMIC Low Noise Amplifiers
that integrate a low loss LNA bypass mode on the IC.
The amplifier is ideal for WiBro & WiMAX receivers
operating between 2.3 and 2.7 GHz and provides 1.0
dB noise figure, 20 dB of gain and +31 dBm IP3 from
a single supply of +5.0V @ 74 mA. Input and output
return losses are 14 and 15 dB respectively with no
external matching components required. A single
control line (0/+3V) is used to switch between LNA
mode and a low 2.0 dB loss bypass mode reducing
the current consumption to 10 μA.
Electrical Specifications, TA = +25° C, Vdd = +5V
Parameter
Min.
LNA Mode
Typ.
Max.
Bypass Mode
Min.
Typ. Max.
Frequency Range
2.3 - 2.7
2.3 - 2.7
Gain
19.5
20.3
1.3 -1.9
Gain Variation Over Temperature
0.012
0.002
Noise Figure
1.1 1.3
Input Return Loss
14 13
Output Return Loss
15 13
Reverse Isolation
33
Output Power for 1dB Compression (P1dB)*
17 16
Output Third Order Intercept (IP3)*
(-20 dBm Input Power per tone, 1 MHz tone spacing)
31
Supply Current (Idd)
74 90
0.01
Swtiching Speed
LNA Mode to Bypass Mode
Bypass Mode to LNA Mode
-
60
6.0
-
* P1dB and IP3 for LNA Mode are referenced to RFOUT while P1dB for Bypass Mode are referenced to RFIN.
Units
GHz
dB
dB / °C
dB
dB
dB
dB
dBm
dBm
mA
ns
ns
5 - 620
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
www.DataSheet4U.com
HMC605LP3 / 605LP3E
v00.0407
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
5
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power
(RFin)(Vdd = +5.0 Vdc)
LNA Mode
Bypass Mode
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 13.7 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+8.0 Vdc
+15 dBm
+30 dBm
150 °C
890 mW
73 °C/W
-65 to +150° C
-40 to +85° C
Typical Supply Current vs. Vdd
Vdd (Vdc)
+5.0
Idd (mA)
74
Truth Table
LNA Mode
Bypass Mode
Vctl = Vcc
Vctl= 0V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
5 - 624
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
HMC605LP3
Package Body Material
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC605LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 [1]
MSL1 [2]
Package Marking [3]
605
XXXX
605
XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC605LP3.PDF ] | |
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