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PDF NESG2030M04 Data sheet ( Hoja de datos )
| Número de pieza | NESG2030M04 | |
| Descripción | SiGe HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | CEL | |
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NPN SiGe RF TRANSISTOR
NESG2030M04
NPN SiGe HIGH FREQUENCY TRANSISTOR
FEATURES
• SiGe TECHNOLOGY:
fT = 60 GHz Process
• LOW NOISE FIGURE:
NF = 0.9 dBm at 2 GHz
• HIGH MAXIMUM STABLE GAIN:
MSG = 20 dB at 2 GHz
• NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
M04
DESCRIPTION
NEC's NESG2030M04 is fabricated using NEC's state-of-the-art SiGe, wafer process. With a typical transition frequency of
60 GHz the NESG2030M04 is usable in applications from 100 MHz to over 10 GHz. Maximum DC current input of 35 mA provides
a device with a usable current range of 250 μA to 25 mA. The NESG2030M04 provides excellent low voltage/low current performance.
NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NESG2030M04 is an ideal
choice for LNA and oscillator requirements in all mobile communication systems.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
ICBO
IEBO
hFE
Cre
NF
Ga
MSG
|S21E|2
P1dB
OIP3
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Collector Cutoff Current at VCB = 5V, IE = 0
Emitter Cutoff Current at VEB = 0.5 V, IC = 0
DC Current Gain2 at VCE = 2 V, IC = 5 mA
Reverse Transfer Capacitance3 at VCB = 2 V, IE = 0 mA, f = 1 GHz
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT
Associated Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT
Maximum Stable Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz
Output Power at 1 dB compression point
VCE = 2 V, IC = 20 mA, f = 2 GHz
Third Order Intercept Point, VCE = 2 V, IC = 20 mA, f = 2 GHz
UNITS
nA
nA
pF
dB
GHz
dB
dB
dBm
dBm
NESG2030M04
2SC5761
M04
MIN TYP MAX
200
200
200 400
0.17 0.22
0.9 1.1
16
18 20
16 18
12
22
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
3. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
4. MSG = S21
S12
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 22, 2005
1 page  
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
NFMIN
GA
(GHz)
(dB) (dB)
VCE = 2 V, IC = 5 mA
0.8 0.77 22.62
0.9 0.77 21.79
1.0 0.78 21.03
1.1 0.78 20.33
1.2 0.79 19.69
1.3 0.79 19.10
1.4 0.80 18.56
1.5 0.81 18.05
1.7 0.82 17.13
1.9 0.84 16.31
2.0 0.85 15.94
2.2 0.87 15.26
2.4 0.89 14.64
2.5 0.91 14.36
2.7 0.93 13.83
3.0 0.98 13.12
3.5 1.06 12.12
4.0 1.15 11.31
4.5 1.26 10.63
VCE = 2 V, IC = 10 mA
0.8 0.95 24.28
0.9 0.95 23.43
1.0 0.95 22.65
1.1 0.95 21.93
1.2 0.95 21.27
1.3 0.95 20.65
1.4 0.96 20.08
1.5 0.96 19.54
1.7 0.96 18.56
1.9 0.97 17.70
2.0 0.98 17.30
2.2 0.99 16.56
2.4 1.00 15.89
2.5 1.01 15.58
2.7 1.03 15.00
3.0 1.06 14.23
3.5 1.12 13.13
4.0 1.19 12.23
4.5 1.27 11.48
VCE = 2 V, IC = 20 mA
0.8 1.26 25.33
0.9 1.25 24.45
1.0 1.25 23.65
1.1 1.25 22.91
1.2 1.25 22.23
1.3 1.25 21.60
1.4 1.25 21.01
1.5 1.25 20.46
1.7 1.25 19.46
1.9 1.26 18.57
ΓOPT
MAG ANG
0.440
0.433
0.426
0.418
0.410
0.402
0.394
0.386
0.372
0.359
0.354
0.345
0.340
0.338
0.338
0.342
0.354
0.354
0.325
22.0
25.3
28.6
32.0
35.5
39.0
42.6
46.3
54.0
62.1
66.3
74.9
83.6
87.9
96.4
108.6
126.4
141.4
155.7
0.264
0.261
0.257
0.253
0.249
0.244
0.239
0.234
0.226
0.219
0.216
0.213
0.213
0.214
0.219
0.229
0.249
0.258
0.243
18.6
21.8
25.1
28.5
32.0
35.6
39.3
43.2
51.5
60.4
65.0
74.6
84.2
88.9
98.1
108.6
110.7
142.4
156.3
0.082
0.081
0.079
0.076
0.074
0.071
0.068
0.065
0.061
0.062
14.2
17.4
20.9
24.9
29.4
34.5
40.4
47.1
63.0
81.1
Rn/50
0.21
0.21
0.20
0.20
0.19
0.19
0.18
0.18
0.17
0.16
0.16
0.15
0.14
0.14
0.13
0.12
0.11
0.09
0.08
0.18
0.18
0.18
0.17
0.17
0.17
0.17
0.16
0.16
0.15
0.15
0.14
0.14
0.13
0.13
0.12
0.11
0.10
0.10
0.17
0.17
0.17
0.17
0.17
0.16
0.16
0.16
0.15
0.15
NESG2030M04
TYPICAL NOISE PARAMETERS (CONT')
FREQ.
NFMIN
GA
(GHz)
(dB) (dB)
VCE = 2 V, IC = 20 mA
2.0 1.26 18.16
2.2 1.27 17.40
2.4 1.28 16.71
2.5 1.28 16.39
2.7 1.30 15.79
3.0 1.32 14.97
3.5 1.36 13.81
4.0 1.42 12.84
4.5 1.48 12.02
ΓOPT
MAG ANG
0.064
0.072
0.083
0.090
0.105
0.128
0.159
0.175
0.169
90.1
106.5
119.5
124.8
133.5
143.2
154.7
164.5
176.7
Rn/50
0.15
0.15
0.14
0.14
0.14
0.13
0.13
0.12
0.12
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M04
FLAT LEAD 4-PIN THIN TYPE SUPER MINIMOLD
0.40-+00.0.16
2
0.60
2.0 –0.1 1.25
0.65
1
0.30-+00.0.15
(Leads 1, 3, 4)
2.05–0.1
1.25–0.1
3
4
0.65
1.30
0.65
0.59–0.05
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
0.11-+0.00.51
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NESG2030M04.PDF ] | |
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