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CEFB104-G PDF даташит

Спецификация CEFB104-G изготовлена ​​​​«Comchip Technology» и имеет функцию, называемую «(CEFB101-G - CEFB105-G) SMD Efficient Fast Recovery Rectifier».

Детали детали

Номер произв CEFB104-G
Описание (CEFB101-G - CEFB105-G) SMD Efficient Fast Recovery Rectifier
Производители Comchip Technology
логотип Comchip Technology логотип 

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CEFB104-G Даташит, Описание, Даташиты
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SMD Efficient Fast Recovery Rectifier
CEFB101-G Thru CEFB105-G (RoHS Device)
Reverse Voltage: 50 ~ 600 Volts
Forward Current: 1.0 Amp
Features:
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0.
Super fast recovery time for high efficient
Built-in strain relief
Low forward voltage drop
Mechanical Data:
Case: JEDEC DO-214AA molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode end
Approx. Weight: 0.063 gram
Maximum Ratings and Electrical Characterics:
SMB / DO-214AA
0.083(2.11)
0.075(1.91)
0.155(3.94)
0.130(3.30)
0.185(4.70)
0.160(4.06)
0.096(2.44)
0.083(2.13)
0.012(0.31)
0.006(0.15)
0.050(1.27)
0.030(0.76)
0.220(5.59)
0.200(5.08)
0.008(0.20)
0.203(0.10)
Dimensions in inches and (millimeter)
Parameter
Max. Repetitive Peak Reverse Voltage
Max. DC Blocking Voltage
Max. RMS Voltage
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
(JEDEC method)
Max. Average Forward Current
Max. Instantaneous Forward Voltage
at 1.0A
Reverse recovery time
Max. DC Reverse Current at Rated DC
Blocking Voltage
Ta=25oC
Ta=100oC
Max. Thermal Resistance (Note1)
Max. Operating Junction Temperature
Storage Temperature
Symbol CEFB101-G CEFB102-G CEFB103-G CEFB104-G CEFB105-G
VRRM
VDC
VRMS
50
50
35
100 200 400 600
100 200 400 600
70 140 280 420
Unit
V
V
V
IFSM
30
A
Io
VF
Trr
IR
R JL
Tj
TSTG
0.875
25
1.0
5.0
200
13
150
-55 to +150
1.1
35
1.25
50
A
V
nS
uA
oC/W
oC
oC
Note1: Thermal resistance from junction to lead mounted on PCB with 8.0mmx8.0mm2 copper pad areas.
-Gsuffix designates RoHS compliant Version
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CEFB104-G Даташит, Описание, Даташиты
SMD Efficient Fast Recovery Rectifier
Rating and Characteristic Curves (CEFB101-G Thru CEFB105-G)
Fig.1- Reverse Characteristics
Fig.2 - Forward Characteristics
100 10
CEFB101-G ~ 103-G
CEFB104-G
10 1.0
1.0
0.1
0.01
0 15 30 45 60 75 90 105 120 135 150
Percent of Rated Peak Reverse Voltage (%)
0.1
CEFB105-G
0.01
0.001
0
0.2 0.4
Pulse width 300uS
4% duty cycle
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Forward Voltage (V)
Fig. 3 - Junction Capacitance
f=1MHz and applied
4VDC reverse voltage
Fig.4 - Non Repetitive Forward
Surge Curre
CEFB104-G ~ 105-G
CEFB104-G ~ 105-G
0.01 0.1
1.0 10 100
Number of Cycles at 60Hz
Fig.5 - Test Circuit Diagram and Reverse Recovery Time Characteristics
NONINDUCTIVE
NONINDUCTIVE
trr
Fig. 6 - Current Derating Curve
D.U.T.
OSCILLISCOPE
NOTES: 1. Rise Times = 7ns max., Input Impedance = 1 megohm.22pF.
2. Rise Time = 10ns max., Source Impedance = 50 ohms.
-G” suffix designates RoHS compliant Version
Single Phase
Half Wave 60Hz
1cm
SET TIME BASE FOR
50 / 10ns / cm
0 25 50 75 100 125 150 175
Ambient Temperature
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Номер в каталогеОписаниеПроизводители
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