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PDF CER6080 Data sheet ( Hoja de datos )
| Número de pieza | CER6080 | |
| Descripción | Dual Enhancement Mode Field Effect Transistor | |
| Fabricantes | CET | |
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CER6080
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
60V, 5.6A, RDS(ON) = 45mΩ @VGS = 10V.
RDS(ON) = 75mΩ @VGS = 4.5V.
-60V, -3.3A, RDS(ON) = 130mΩ @VGS = -10V.
RDS(ON) = 180mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D1 D1 D2 D2
87 65
5
DIP-8
1
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 60
VGS ±20
ID 5.6
IDM 20
P-Channel
-60
±20
-3.3
-15
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
50
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2006.Sep
http://www.cetsemi.com
1 page  
P-CHANNEL
25
-VGS=10,8,6,5V
20
15
10
5 -VGS=3.0V
0
0.0 1.0 2.0 3.0 4.0 5.0
-VDS, Drain-to-Source Voltage (V)
Figure 7. Output Characteristics
1200
1000
Ciss
800
600
400
200 Coss
0 Crss
0 6 12 18 24 30
-VDS, Drain-to-Source Voltage (V)
Figure 9. Capacitance
1.3
VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 11. Gate Threshold Variation
with Temperature
5
CER6080
5
4
3
2
1
0
0.0
25 C
TJ=125 C
-55 C
1.0 2.0 3.0 4.0
5.0
-VGS, Gate-to-Source Voltage (V)
Figure 8. Transfer Characteristics
2.2
ID=-3.3A
1.9 VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 10. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 12. Body Diode Forward Voltage
Variation with Source Current
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet CER6080.PDF ] | |
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