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HAF2012S PDF даташит

Спецификация HAF2012S изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel MOS FET Series Power Switching».

Детали детали

Номер произв HAF2012S
Описание Silicon N Channel MOS FET Series Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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HAF2012S Даташит, Описание, Даташиты
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HAF2012(L), HAF2012(S)
Silicon N Channel MOS FET Series
Power Switching
REJ03G1139-0400
Rev.4.00
Jul 13, 2007
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
Logic level operation (4 to 6 V Gate drive)
High endurance capability against to the short circuit
Built-in the over temperature shut-down circuit
Latch type shut-down operation (Need 0 voltage recovery)
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
1
2
3
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
D
1. Gate
2. Drain
3. Source
4. Drain
G Gate Resistor
Tempe-
rature
Sensing
Circuit
Latch
Circuit
Gate
Shut-
down
Circuit
S
REJ03G1139-0400 Rev.4.00 Jul 13, 2007
Page 1 of 9









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HAF2012S Даташит, Описание, Даташиты
HAF2012(L), HAF2012(S)
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Ta = 25°C
Symbol
VDSS
VGSS
VGSS
ID
ID (pulse) Note 1
IDR
Pch Note 2
Tch
Tstg
Value
60
16
–2.8
20
40
20
50
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
A
W
°C
°C
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Symbol
VIH
VIL
IIH1
IIH2
IIL
IIH (sd) 1
IIH (sd) 2
Tsd
VOP
(Ta = 25°C)
Min Typ Max Unit
Test Conditions
3.5 — — V
— — 1.2 V
— — 100 µA Vi = 8 V, VDS = 0
— — 50 µA Vi = 3.5 V, VDS = 0
— — 1 µA Vi = 1.2 V, VDS = 0
— 0.8 — mA Vi = 8 V, VDS = 0
— 0.35 —
mA Vi = 3.5 V, VDS = 0
— 175 —
°C Channel temperature
3.5 — 13 V
REJ03G1139-0400 Rev.4.00 Jul 13, 2007
Page 2 of 9









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HAF2012S Даташит, Описание, Даташиты
HAF2012(L), HAF2012(S)
Electrical Characteristics
Drain current
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Output capacitance
Symbol
ID1
ID2
V (BR) DSS
V (BR) GSS
V (BR) GSS
IGSS1
IGSS2
IGSS3
IGSS4
IGS (op) 1
IGS (op) 2
IDSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Coss
Min
10
60
16
–2.8
1.0
6
Typ Max
——
— 10
——
——
——
— 100
— 50
—1
— –100
0.8 —
0.35 —
— 250
— 2.25
50 65
30 43
12 —
630 —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
td (on)
tr
td (off)
tf
VDF
trr
— 7.5 —
— 29 —
— 34 —
— 26 —
— 1.0 —
— 110 —
Over load shut down operation time Note4
tos1 — 1.8 —
tos2 — 0.7 —
Notes: 3. Pulse test
4. Including the junction temperature rise of the over loaded condition.
Unit
A
mA
V
V
V
µA
µA
µA
µA
mA
mA
µA
V
m
m
S
pF
µs
µs
µs
µs
V
ns
ms
ms
(Ta = 25°C)
Test Conditions
VGS = 3.5 V, VDS = 2 V
VGS = 1.2 V, VDS = 2 V
ID = 10 mA, VGS = 0
IG = 100 µA, VDS = 0
IG = –100 µA, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VGS = 1.2 V, VDS = 0
VGS = –2.4 V, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VDS = 50 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 10 A, VGS = 4 V Note 3
ID = 10 A, VGS = 10 V Note 3
ID = 10 A, VDS = 10 V Note 3
VDS = 10 V, VGS = 0
f = 1 MHz
ID = 5 A
VGS = 5 V
RL = 6
IF = 20 A, VGS = 0
IF = 20 A, VGS = 0
diF/dt = 50 A/µs
VGS = 5 V, VDD = 12 V
VGS = 5 V, VDD = 24 V
REJ03G1139-0400 Rev.4.00 Jul 13, 2007
Page 3 of 9










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Номер в каталогеОписаниеПроизводители
HAF2012Silicon N Channel MOS FET Series Power SwitchingRenesas Technology
Renesas Technology
HAF2012LSilicon N Channel MOS FET Series Power SwitchingRenesas Technology
Renesas Technology
HAF2012SSilicon N Channel MOS FET Series Power SwitchingRenesas Technology
Renesas Technology

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