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HAT1065T PDF даташит

Спецификация HAT1065T изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon P Channel MOS FET High Speed Power Switching».

Детали детали

Номер произв HAT1065T
Описание Silicon P Channel MOS FET High Speed Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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HAT1065T Даташит, Описание, Даташиты
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HAT1065T
Silicon P Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Capable of –4 V gate drive
High density mounting
Outline
RENESAS Package code: PTSP0008JB-B
(Package name: TSSOP-8 <TTP-8DV> )
87 6 5
123 4
REJ03G0161-0200
Rev.2.00
Aug 06, 2007
18
DD
45
GG
S3
MOS1
S6
MOS2
1, 8 Drain
3, 6 Source
4, 5 Gate
2, 7 NC
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
–200
Gate to source voltage
VGSS
±15
Drain current
Drain peak current
ID
ID(pulse)Note1
–0.25
–1
Body-drain diode reverse drain current
Channel dissipation
Channel dissipation
IDR
Pch Note2
Pch Note3
–0.25
1
1.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 µs, duty cycle 1 %
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
REJ03G0161-0200 Rev.2.00 Aug 06, 2007
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HAT1065T Даташит, Описание, Даташиты
HAT1065T
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Notes: 4. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
Min
–200
±15
–1.0
0.29
Typ
5.0
6.0
7.0
0.45
140
37
10
12
9
25
15
–0.9
Max
±10
–5
–2.0
6.2
7.5
10.0
–1.4
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
(Ta = 25°C)
Test Conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±12 V, VDS = 0
VDS = –200 V, VGS = 0
VDS = –10 V, ID = –1 mA
ID = –0.25 A, VGS = –10 V Note4
ID = –0.25 A, VGS = –4 V Note4
ID = –1 A, VGS = –5 V Note4
ID = –0.25 A, VDS = –10 V Note4
VDS = –10 V
VGS = 0
f = 1 MHz
VGS = –5 V, ID = –0.25 A
VDD –30 V
IF = –0.25 A, VGS = 0 Note4
REJ03G0161-0200 Rev.2.00 Aug 06, 2007
Page 2 of 3









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HAT1065T Даташит, Описание, Даташиты
HAT1065T
Package Dimensions
Package Name
TSSOP-8
JEITA Package Code
P-TSSOP8-4.4 × 3-0.65
RENESAS Code
PTSP0008JB-B
Previous Code
TTP-8DV
MASS[Typ.]
0.034g
*1 D
85
Index mark
1
Z
4
*3 bp
e
xM
bp
Terminal cross section
(Ni/Pd/Au plating)
L1
L
y
Detail F
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
Reference Dimension in Millimeters
Symbol Min Nom Max
D 3.00 3.30
E 4.40
A2
A1 0.03 0.07 0.10
A 1.10
bp 0.15 0.20 0.25
b1
c 0.10 0.15 0.20
c1
0° 8°
HE 6.20 6.40 6.60
e 0.65
x 0.13
y 0.10
Z 0.805
L 0.40 0.50 0.60
L1 1.0
Ordering Information
Part No.
HAT1065T-EL-E
Quantity
3000 pcs
Taping
Shipping Container
REJ03G0161-0200 Rev.2.00 Aug 06, 2007
Page 3 of 3










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Номер в каталогеОписаниеПроизводители
HAT1065RSilicon P Channel Power MOS FET Power SwitchingRenesas Technology
Renesas Technology
HAT1065TSilicon P Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology

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