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HAT2220R PDF даташит

Спецификация HAT2220R изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel MOS FET High Speed Power Switching».

Детали детали

Номер произв HAT2220R
Описание Silicon N Channel MOS FET High Speed Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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HAT2220R Даташит, Описание, Даташиты
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HAT2220R
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low drive current
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
78
DD
56
DD
87 65
1234
24
GG
S1
MOS1
S3
MOS2
REJ03G1572-0500
Rev.5.00
Jul 20, 2007
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
VDSS
VGSS
ID Note1
ID(pulse)Note2
450
±30
0.7
2.1
Body-drain diode reverse drain current
Avalanche current
Channel dissipation
Channel dissipation
IDR
IAP Note3
Pch Note4
Pch Note5
0.7
0.7
2
3
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 1 s
2. PW 10 µs, duty cycle 1%
3. STch = 25 °C, Tch 150 °C
4. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
5. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
W
°C
°C
REJ03G1572-0500 Rev.5.00 Jul 20, 2007
Page 1 of 3









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HAT2220R Даташит, Описание, Даташиты
HAT2220R
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
450
3.0
0.55
0.95
5.5
1
±0.1
4.5
6.5
V ID = 10 mA, VGS = 0
µA VDS = 450 V, VGS = 0
µA VGS = ±30 V, VDS = 0
V VDS = 10 V, ID = 1 mA
S ID = 0.4 A, VDS = 10 V Note6
ID = 0.4 A, VGS = 10 V Note6
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss — 140 —
Coss
17
Crss
5
pF VDS = 25 V
pF VGS = 0
pF f = 1 MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
22
ns ID = 0.4 A
tr — 12 — ns VGS = 10 V
td(off)
38
ns RL = 562
tf — 47 — ns Rg = 10
Total gate charge
Gate to source charge
Gate to drain charge
Qg — 4.9 — nC VDD = 360 V
Qgs — 0.6 — nC VGS = 10 V
Qgd — 3.2 — nC ID = 0.7 A
Body–drain diode forward voltage
VDF
— 0.84 1.24
V IF = 0.7 A, VGS = 0 Note6
Body–drain diode reverse recovery
time
trr
— 120 —
ns IF = 0.7 A, VGS = 0
diF/dt = 100 A/ µs
Notes: 6. Pulse test
7. Since this device includes two high voltage Power MOS FET chips (VDSS 450 V), high voltage margin may
occur. (Between No.6 pin and No.7 pin in the outline fig.) Therefore, please be sure to confirm about Electric
discharge between No.6 pin and No.7 pin in the equivalent circuit.
REJ03G1572-0500 Rev.5.00 Jul 20, 2007
Page 2 of 3









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HAT2220R Даташит, Описание, Даташиты
HAT2220R
Package Dimensions
Package Name
SOP-8
JEITA Package Code
P-SOP8-3.95 × 4.9-1.27
RENESAS Code
PRSP0008DD-D
Previous Code
FP-8DAV
MASS[Typ.]
0.085g
*1 D
8
5
Index mark
1
Z
4
*3 bp
e
xM
y
Ordering Information
Part No.
HAT2220R-EL-E
Quantity
2500 pcs
bp
Terminal cross section
(Ni/Pd/Au plating)
L1
L
Detail F
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
Reference Dimension in Millimeters
Symbol Min Nom Max
D 4.90 5.3
E 3.95
A2
A1 0.10 0.14 0.25
A 1.75
bp 0.34 0.40 0.46
b1
c 0.15 0.20 0.25
c1
0° 8°
HE 5.80 6.10 6.20
e 1.27
x 0.25
y 0.1
Z 0.75
L 0.40 0.60 1.27
L1 1.08
Taping
Shipping Container
REJ03G1572-0500 Rev.5.00 Jul 20, 2007
Page 3 of 3










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Номер в каталогеОписаниеПроизводители
HAT2220RSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology

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