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N256S0818HDA PDF даташит

Спецификация N256S0818HDA изготовлена ​​​​«AMI» и имеет функцию, называемую «(N256S0818HDA / N256S0830HDA) 256Kb Low Power Serial SRAMs 32K X 8 bit Organization».

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Номер произв N256S0818HDA
Описание (N256S0818HDA / N256S0830HDA) 256Kb Low Power Serial SRAMs 32K X 8 bit Organization
Производители AMI
логотип AMI логотип 

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N256S0818HDA Даташит, Описание, Даташиты
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AMI Semiconductor, Inc.
ULP Memory Solutions
670 North McCarthy Blvd. Suite 220
Milpitas, CA 95035
PH: 408-935-7777, FAX: 408-935-7770
N256S0818HDA/N256S0830HDA
Advance Information
256Kb Low Power Serial SRAMs
32K × 8 bit Organization
Overview
The AMI Semiconductor serial SRAM family
includes several integrated memory devices
including this 256Kb serially accessed Static
Random Access Memory, internally organized as
32K words by 8 bits. The devices are designed and
fabricated using AMI’s advanced CMOS
technology to provide both high-speed
performance and low power. The devices operate
with a single chip select (CS) input and use a
simple Serial Peripheral Interface (SPI) serial bus.
A single data in and data out line is used along with
a clock to access data within the devices. The
N256S08xxHDA devices include a HOLD pin that
allows communication to the device to be paused.
While paused, input transitions will be ignored.
The devices can operate over a wide temperature
range of -40oC to +85oC and can be available in
several standard package offerings.
Features
• Power Supply Options
1.8V to 3.6V
• Very low standby current
As low as 200nA
• Very low operating current
As low as 500uA
• Simple memory control
Single chip select (CS)
Serial input (SI) and serial output (SO)
• Flexible operating modes
Word read and write
Page mode (32 word page)
Burst mode (full array)
• Organization
32K x 8 bit
• Self timed write cycles
• Built-in write protection (CS high)
• HOLD pin for pausing communication
• High reliability
Unlimited write cycles
• RoHS Compliant Packages
Green SOIC and TSSOP
Device Options
Part Number
N256S0818HDA
N256S0830HDA
Density
256Kb
Power
Supply (V)
1.8
3.0
Speed
(MHz)
20
25
Feature
HOLD
Typical
Standby
Current
200nA
1uA
Read/Write
Operating Current
500 uA @ 1Mhz
This is a developmental specification and is subject to change without notice.
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N256S0818HDA Даташит, Описание, Даташиты
AMI Semiconductor, Inc.
Pin Names
Pin Name
CS
SCK
SI
SO
HOLD
NC
VCC
VSS
Pin Function
Chip Select Input
Serial Clock Input
Serial Data Input
Serial Data Output
Hold Input
No Connect
Power
Ground
N256S0818HDA/N256S0830HDA
Advance Information
Package Configurations
CS
SO
NC
VSS
1
2
3
4
8 VCC
7 HOLD
6 SCK
5 SI
CS
SO
NC
VSS
1
2
3
4
8 VCC
7 HOLD
6 SCK
5 SI
Functional Block Diagram
SCK
HOLD
Clock
Circuitry
CS Decode
Logic
SI
Data In
Receiver
SO
Data Out
Buffer
SRAM
Array
This is a developmental specification and is subject to change without notice.
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N256S0818HDA Даташит, Описание, Даташиты
AMI Semiconductor, Inc.
N256S0818HDA/N256S0830HDA
Advance Information
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
VIN,OUT
VCC
PD
TSTG
TA
TSOLDER
–0.3 to VCC+0.3
–0.3 to 4.5
500
–40 to 125
-40 to +85
260oC, 10sec
V
V
mW
oC
oC
oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Min.
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Read/Write Operating
Current
VCC
VCC
VIH
VIL
VOH
VOL
ILI
ILO
ICC1
ICC2
ICC3
Standby Current
ISB
1.8V Device
3V Device
IOH = -0.4mA
IOL = 1mA
CS = VCC, VIN = 0 to VCC
CS = VCC, VOUT = 0 to VCC
F = 1MHz, IOUT = 0
F = 10MHz, IOUT = 0
F = 20/25MHz, IOUT = 0
1.8V Device
CS = VCC, VIN = VSS or VCC
3V Device
CS = VCC, VIN = VSS or VCC
1.7
2.3
0.7 x VCC
–0.3
VCC–0.5
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and are not 100% tested.
Typ1
200
1
Max Unit
1.95 V
3.6 V
VCC+0.3
0.3 x VCC
V
V
V
0.2 V
0.5 µA
0.5 µA
500 µA
4 mA
8/10 mA
500 nA
3 µA
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
7 pF
7 pF
This is a developmental specification and is subject to change without notice.
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N256S0818HDA(N256S0818HDA / N256S0830HDA) 256Kb Low Power Serial SRAMs 32K X 8 bit OrganizationAMI
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