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OM6012SA PDF даташит

Спецификация OM6012SA изготовлена ​​​​«Omnlrel» и имеет функцию, называемую «(OM6009SA - OM6112SA) POWER MOSFETS».

Детали детали

Номер произв OM6012SA
Описание (OM6009SA - OM6112SA) POWER MOSFETS
Производители Omnlrel
логотип Omnlrel логотип 

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OM6012SA Даташит, Описание, Даташиты
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OM6009SA OM6011SA OM6109SA OM6111SA
OM6010SA OM6012SA OM6110SA OM6112SA
POWER MOSFETS IN HERMETIC ISOLATED
TO-254AA PACKAGE
100V Thru 500V, Up To 22 Amp, N-Channel
MOSFET In Hermetic Metal Package, With
Optional Zener Gate Clamp Protection
FEATURES
• Isolated Hermetic Metal Package
• Fast Switching
• Low RDS(on)
• Available Hi-Rel Screened To MIL-S-19500, TX, TXV And S Levels
• Bi-Lateral Zener Gate Protection (Optional)
• Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications
such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits. The MOSFET gates are protected using
bi-lateral zeners in the OM6109SA series.
MAXIMUM RATINGS
PART NUMBER
OM6009SA, OM6109SA
VDS
100V
OM6010SA, OM6110SA
200V
OM6011SA, OM6111SA
400V
OM6012SA, OM6112SA
500V
Note: OM61XX Series include gate protection circuitry.
RDS(ON)
.095
.18
.55
.85
ID(MAX)
22A
18A
10A
8A
SCHEMATIC
POWER RATING
3.1
4 11 R3
Supersedes 1 07 R2
3.1 - 79









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OM6012SA Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM6009SA / OM6109SA
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS(th)
IGSSF
IGSSR
IGSS
IDSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Gate-Body Leakage (OM6109)
Zero Gate Voltage Drain
Current
ID(on)
VDS(on)
On-State Drain Current1
Static Drain-Source On-State
Voltage1
100 V
2.0 4.0 V
100 nA
-100 nA
± 500 nA
0.1 0.25 mA
0.2 1.0 mA
22 A
1.275 1.425 V
VGS = 0,
ID = 250 mA
VDS = VGS, ID = 250 mA
VGS = 20 V
VGS = - 20 V
VGS = ± 12.8 V
VDS = Max. Rat., VGS = 0
VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
VDS 2 VDS(on), VGS = 10 V
VGS = 10 V, ID = 15 A
RDS(on) Static Drain-Source On-State
Resistance1
.085 .095
VGS = 10 V, ID = 15 A
RDS(on) Static Drain-Source On-State
Resistance1
.130 .155
VGS = 10 V, ID = 15 A,
TC = 125 C
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM6010SA / OM6110SA
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS(th)
IGSSF
IGSSR
IGSS
IDSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Gate-Body Leakage (OM6110)
Zero Gate Voltage Drain
Current
ID(on)
VDS(on)
On-State Drain Current1
Static Drain-Source On-State
Voltage1
200 V
2.0 4.0 V
100 nA
- 100 nA
± 500 nA
0.1 0.25 mA
0.2 1.0 mA
18
1.4 1.8
A
V
VGS = 0,
ID = 250 mA
VDS = VGS, ID = 250 mA
VGS = 20 V
VGS = - 20 V
VGS = ± 12.8 V
VDS = Max. Rat., VGS = 0
VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
VDS 2 VDS(on), VGS = 10 V
VGS = 10 V, ID = 10 A
RDS(on) Static Drain-Source On-State
Resistance1
0.14 0.18
VGS = 10 V, ID = 10 A
RDS(on) Static Drain-Source On-State
Resistance1
0.28 0.36
VGS = 10 V, ID = 10 A,
TC = 125 C
DYNAMIC
gfs
Ciss
Coss
Crss
Td(on)
tr
Td(off)
tf
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
10.0
1275
550
160
16
19
42
24
S(W )
pF
pF
pF
VDS 2 VDS(on), ID = 15 A
VGS = 0
VDS = 25 V
f = 1 MHz
ns VDD = 30 V, ID = 5 A
ns Rg = 5 W , VGS = 10 V
ns
(MOSFET) switching times are
essentially independent of
ns operating temperature.
DYNAMIC
gfs
Ciss
Coss
Crss
Td(on)
tr
Td(off)
tf
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
6.0
1000
250
100
17
52
36
30
S(W )
pF
pF
pF
VDS 2 VDS(on), ID = 10 A
VGS = 0
VDS = 25 V
f = 1 MHz
ns VDD = 75 V, ID @ 18 A
ns Rg = 5 W , VGS = 10 V
ns (MOSFET) switching times are
essentially independent of
ns operating temperature.
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS Continuous Source Current
(Body Diode)
- 27 A Modified MOSPOWER
symbol showing
D
IS Continuous Source Current
(Body Diode)
- 18 A Modified MOSPOWER
symbol showing
D
ISM Source Current1
(Body Diode)
VSD Diode Forward Voltage1
trr Reverse Recovery Time
- 108 A the integral P-N G
ISM Source Current1
Junction rectifier.
S
(Body Diode)
- 2.5 V TC = 25 C, IS = -24 A, VGS = 0 VSD Diode Forward Voltage1
200 ns TJ = 150 C,IF = IS,
trr Reverse Recovery Time
dlF/ds = 100 A/ms
- 72 A the integral P-N G
-2
350
Junction rectifier.
S
V TC = 25 C, IS = -18 A, VGS = 0
ns TJ = 150 C,IF = IS,
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.









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OM6012SA Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM6011SA / OM6111SA
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
400
V VGS = 0,
Voltage
ID = 250 mA
VGS(th) Gate-Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250 mA
IGSSF Gate-Body Leakage Forward
100 nA VGS = 20 V
IGSSR Gate-Body Leakage Reverse
-100 nA VGS = - 20 V
IGSS Gate-Body Leakage (OM6111)
± 500 nA VGS = ± 12.8 V
IDSS Zero Gate Voltage Drain
0.1 0.25 mA VDS = Max. Rat., VGS = 0
Current
0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
ID(on) On-State Drain Current1
10
A VDS 2 VDS(on), VGS = 10 V
VDS(on) Static Drain-Source On-State
2.35 2.75 V VGS = 10 V, ID = 5 A
Voltage1
RDS(on) Static Drain-Source On-State
Resistance1
0.47 0.55
VGS = 10 V, ID = 5 A
RDS(on) Static Drain-Source On-State
Resistance1
0.93 1.10
VGS = 10 V, ID = 5 A,
TC = 125 C
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM6012SA / OM6112SA
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS(th)
IGSSF
IGSSR
IGSS
IDSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Gate-Body Leakage (OM6112)
Zero Gate Voltage Drain
Current
ID(on)
VDS(on)
On-State Drain Current1
Static Drain-Source On-State
Voltage1
500 V VGS = 0,
ID = 250 mA
2.0 4.0 V VDS = VGS, ID = 250 mA
100 nA VGS = 20 V
- 100 nA VGS = - 20 V
± 500 nA VGS = ± 12.8 V
0.1 0.25 mA VDS = Max. Rat., VGS = 0
0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
8.0 A VDS 2 VDS(on), VGS = 10 V
3.2 3.4 V VGS = 10 V, ID = 4 A
RDS(on) Static Drain-Source On-State
Resistance1
0.8 0.85
VGS = 10 V, ID = 4 A
RDS(on) Static Drain-Source On-State
Resistance1
1.50 1.65
VGS = 10 V, ID = 4 A,
TC = 125 C
DYNAMIC
gfs
Ciss
Coss
Crss
Td(on)
tr
Td(off)
tf
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
4.0
1150
165
70
17
12
45
30
S(W )
pF
pF
pF
VDS 2 VDS(on), ID = 5 A
VGS = 0
VDS = 25 V
f = 1 MHz
ns VDD = 175 V, ID @ 5 A
ns Rg = 5 W , VGS = 10 V
ns (MOSFET) switching times are
essentially independent of
ns operating temperature.
DYNAMIC
gfs
Ciss
Coss
Crss
Td(on)
tr
Td(off)
tf
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
4.0
1275
200
85
17
5
42
14
S(W )
pF
pF
pF
VDS 2 VDS(on), ID = 4 A
VGS = 0
VDS = 25 V
f = 1 MHz
ns VDD = 200 V, ID = 4 A
ns Rg = 5 W , VGS = 10 V
ns (MOSFET) switching times are
essentially independent of
ns operating temperature.
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS Continuous Source Current
(Body Diode)
ISM Source Current1
(Body Diode)
VSD Diode Forward Voltage1
trr Reverse Recovery Time
- 10 A Modified MOSPOWER
D
IS Continuous Source Current
symbol showing
(Body Diode)
- 40 A the integral P-N G
ISM Source Current1
Junction rectifier.
S
(Body Diode)
- 2 V TC = 25 C, IS = -10 A, VGS = 0 VSD Diode Forward Voltage1
530 ns TJ = 150 C,IF = IS,
trr Reverse Recovery Time
dlF/ds = 100 A/ms
- 8 A Modified MOSPOWER
D
symbol showing
- 32 A the integral P-N G
-2
700
Junction rectifier.
S
V TC = 25 C, IS = -18 A, VGS = 0
ns TJ = 150 C,IF = IS,
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.










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OM6012SA(OM6009SA - OM6112SA) POWER MOSFETSOmnlrel
Omnlrel

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