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PDF OPE5687HP Data sheet ( Hoja de datos )

Número de pieza OPE5687HP
Descripción High Speed GaAIAs Infrared Emitter
Fabricantes OPTEK Technologies 
Logotipo OPTEK Technologies Logotipo



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High Speed GaAlAs Infrared Emitter
OPE5687HP
The OPE5687HP is GaAlAs infrared emitting diode
that is designed for high power, low forward
voltage and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 880nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 package
and has narrow beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
DIMENSIONS(Unit : mm)
FEATURES
Ultra high-speed : 25ns rise time
880nm wavelength
Wide beam angle
Low forward voltage
High power and high reliability
Available for pulse operating
2-0.5
APPLICATIONS
Emitter of IrDA
IR Audio and Telephone
High speed IR communication
IR LANs
Available for wireless digital data transmission
2.5
Anode
Cathode
Tolerance : ±0.2mm
STORAGE
Condition : 5°C~35°C,R.H.60%
Terms : within 3 months from production date
Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGS
(Ta=25°C )
Item
Symbol
Rating
Power Dissipation
PD 150
Forward current
IF 100
Pulse forward current *1
IFP
1.0
Reverse voltage
VR 4.0
Operating temp.
Topr.
-25~ +85
Soldering temp.
*2
Tsol.
260.
*1.Duty ratio = 1/100, pulse width=0.1ms.
*2.Lead Soldering Temperature (2mm from case for 5sec.).
Unit
mW
mA
A
V
°C
°C
ELECTRO-OPTICALCHARACTERISTICS
Item Symbol
Forward voltage
Reverse current
Capacitance
Radiant intensity
VF
IR
Ct
Ie
Power
Po
Peak emission wavelength
Spectral bandwidth 50%
λp
∆λ
Half angle
∆θ
Optical rise & fall time(10%~90%)
tr/tf
Cut off frequency
*3
fc
Conditions
IF=50mA
VR=4V
f=1MHz
IF=50mA
IF=100mA
IF=50mA
IF=50
IF=50
IF=50
I+F=1500mmAApD-pC
(Ta=25°C)
Min. Typ.
1.5
20
25 50
20 35
880
45
±22
25/15
14
Max.
2.0
10
Unit
V
µA
mW/
mW
nm
nm
deg.
ns
MHz

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