OPE5985 PDF даташит
Спецификация OPE5985 изготовлена «OPTEK Technologies» и имеет функцию, называемую «High Speed GaAlAs Infrared Emitter». |
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Детали детали
Номер произв | OPE5985 |
Описание | High Speed GaAlAs Infrared Emitter |
Производители | OPTEK Technologies |
логотип |
2 Pages
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www.DaHtaSihgehet4SUp.coemed GaAlAs Infrared Emitter
OPE5985
The OPE5985 is GaAlAs infrared emitting diode
that is designed for high power, low forward
voltage and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 850nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1 package
and has wide beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
DIMENSIONS(Unit : mm)
3.0
FEATURES
• High speed : 25ns rise time
• 850nm wavelength
• Wide beam angle
• Low forward voltage
• High power and high reliability
• Available for pulse operating
2- 0.5
APPLICATIONS
• Emitter of IrDA
• IR Audio and Telephone
• High speed IR communication
• IR LANs
• Available for wireless digital data transmission
2.5
Anode
Cathode
Tolerance : ±0.2mm
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions
and environments for this device.
MAXIMUM RATINGS
Item
Symbol
Rating
Power Dissipation
Forward current
Pulse forward current
CCCCCC
PDC
IFC
IFPC
80
60
0.5
Reverse voltage
VRC 5.0
Operating temp.
Topr.
-20~ +70
Soldering temp. CCCCCCCCCCCCCCCʭ2 Tsol.
240.
ʭ1.Duty ratio = 1/100, pulse width=0.1ms.
ʭ2.Lead Soldering Temperature (2mm from case for 5sec.).
(Ta=25)
Unit
C
EC
AC
C
°CC
°CC
ELECTRO-OPTICAL CHARACTERISTICS
Item Symbol
Forward voltage
Reverse current
Capacitance
VFC
IRC
Ct
Radiant intensity
Ie
Peak emission wavelength
Spectral bandwidth 50%
Half angle
Optical rise & fall time(10%~90%)
Cut off frequency
*3. 10logPo(fc MHz)/Po(0.1 MHz)=-3
*3
pC
C
tr/tf
fc
Conditions
IF=50 EC
VR=5VC
f=1 C
EC
IF=50 E B Rank
C Rank
IF=50 EC
IF=50 C
IF=40 C
IF=50 C
IFʺʲD ECEEC
ʮDD EC ʰ C
Min.
C
C
15
40
55
C
C
C
C
C
Typ.
1.5
C
20
~
~
~
850
45
±25
25/13
14
(Ta=25)
Max. Unit
2.0 V
10 µEC
C
DDC
ʲʲC /
C
CC
CC
C deg.
C ns
C MHz
11
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High Speed GaAlAs Infrared Emitter
OPE5985
FORWARD CURRENT Vs.
AMBIENT TEMP.
100
80
60
40
20
0
-20 0 20 40 60 80 100
Ambient Temperature Ta()
RELATIVE RADIANT INTENSITY Vs.
AMBIENT TEMP.
IF=50mA
3
2
1
0.8
0.5
0.3
0.2
0.1
-20 0 20 40 60 80 100
Ambient Temperature Ta()
FORWARD CURRENT Vs.
FORWARD VOLTAGE
100
Ta=25
50
30
20
10
5
4
3
2
11.0 1.1 1.2 1.3 1.4 1.5 1.6
Forward Voltage VF(V)
RADIANT INTENSITY Vs.
FORWARD CURRENT.
20 TTaa==2255
10
5
3
1
0.5
0.3
0.1
0.05
0.03
0.01
1
3 5 10 30 50 100 200 500
Forward Current IF(mA)
RELATIVE RADIANT INTENSITY Vs.
EMISSION WAVELENGTH.
1.0
Ta=25
0.8
0.6
0.4
0.2
0.0700 750 800 850 900 950
Emission Wavelength (nm)
ANGULAR DISPLACEMENT Vs
RELATIVE RADIANT INTENSITY
Ta=25
-20° -10°
-30°
0°
10°
20° 30°
-40° 40°
-50° 50°
-60° 60°
-70° 70°
-80°
-90°
1.0
0.5
0
80°
90°
0.5 1.0
Relative Radiant intensity
12
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Номер в каталоге | Описание | Производители |
OPE5985 | High Speed GaAlAs Infrared Emitter | OPTEK Technologies |
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