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OPE5985 PDF даташит

Спецификация OPE5985 изготовлена ​​​​«OPTEK Technologies» и имеет функцию, называемую «High Speed GaAlAs Infrared Emitter».

Детали детали

Номер произв OPE5985
Описание High Speed GaAlAs Infrared Emitter
Производители OPTEK Technologies
логотип OPTEK Technologies логотип 

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OPE5985 Даташит, Описание, Даташиты
www.DaHtaSihgehet4SUp.coemed GaAlAs Infrared Emitter
OPE5985
The OPE5985 is GaAlAs infrared emitting diode
that is designed for high power, low forward
voltage and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 850nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1 package
and has wide beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
DIMENSIONS(Unit : mm)
3.0
FEATURES
High speed : 25ns rise time
850nm wavelength
Wide beam angle
Low forward voltage
High power and high reliability
Available for pulse operating
2- 0.5
APPLICATIONS
Emitter of IrDA
IR Audio and Telephone
High speed IR communication
IR LANs
Available for wireless digital data transmission
2.5
Anode
Cathode
Tolerance : ±0.2mm
STORAGE
Condition : 5°C~35°C,R.H.60%
Terms : within 3 months from production date
Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions
and environments for this device.
MAXIMUM RATINGS
Item
Symbol
Rating
Power Dissipation
Forward current
Pulse forward current
CCCCCC
PDC
IFC
IFPC
80
60
0.5
Reverse voltage
VRC 5.0
Operating temp.
Topr.
-20~ +70
Soldering temp. CCCCCCCCCCCCCCCʭ2 Tsol.
240.
ʭ1.Duty ratio = 1/100, pulse width=0.1ms.
ʭ2.Lead Soldering Temperature (2mm from case for 5sec.).
(Ta=25)
Unit
C
EC
AC
C
°CC
°CC
ELECTRO-OPTICAL CHARACTERISTICS
Item Symbol
Forward voltage
Reverse current
Capacitance
VFC
IRC
Ct
Radiant intensity
Ie
Peak emission wavelength
Spectral bandwidth 50%
Half angle
Optical rise & fall time(10%~90%)
Cut off frequency
*3. 10logPo(fc MHz)/Po(0.1 MHz)=-3
*3
pC
C

tr/tf
fc
Conditions
IF=50 EC
VR=5VC
f=1 C
EC
IF=50 E B Rank
C Rank
IF=50 EC
IF=50 C
IF=40 C
IF=50 C
IFʺʲD ECEEC
ʮDD EC ʰ C
Min.
C
C
15
40
55
C
C
C
C
C
Typ.
1.5
C
20
~
~
~
850
45
±25
25/13
14
(Ta=25)
Max. Unit
2.0 V
10 µEC
C
DDC
ʲʲC /
C
CC
CC
C deg.
C ns
C MHz
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OPE5985 Даташит, Описание, Даташиты
High Speed GaAlAs Infrared Emitter
OPE5985
FORWARD CURRENT Vs.
AMBIENT TEMP.
100
80
60
40
20
0
-20 0 20 40 60 80 100
Ambient Temperature Ta()
RELATIVE RADIANT INTENSITY Vs.
AMBIENT TEMP.
IF=50mA
3
2
1
0.8
0.5
0.3
0.2
0.1
-20 0 20 40 60 80 100
Ambient Temperature Ta()
FORWARD CURRENT Vs.
FORWARD VOLTAGE
100
Ta=25
50
30
20
10
5
4
3
2
11.0 1.1 1.2 1.3 1.4 1.5 1.6
Forward Voltage VF(V)
RADIANT INTENSITY Vs.
FORWARD CURRENT.
20 TTaa==2255
10
5
3
1
0.5
0.3
0.1
0.05
0.03
0.01
1
3 5 10 30 50 100 200 500
Forward Current IF(mA)
RELATIVE RADIANT INTENSITY Vs.
EMISSION WAVELENGTH.
1.0
Ta=25
0.8
0.6
0.4
0.2
0.0700 750 800 850 900 950
Emission Wavelength (nm)
ANGULAR DISPLACEMENT Vs
RELATIVE RADIANT INTENSITY
Ta=25
-20° -10°
-30°
0°
10°
20° 30°
-40° 40°
-50° 50°
-60° 60°
-70° 70°
-80°
-90°
1.0
0.5
0
80°
90°
0.5 1.0
Relative Radiant intensity
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Номер в каталогеОписаниеПроизводители
OPE5985High Speed GaAlAs Infrared EmitterOPTEK Technologies
OPTEK Technologies

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