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WFP830 PDF даташит

Спецификация WFP830 изготовлена ​​​​«Wisdom technologies» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв WFP830
Описание N-Channel MOSFET
Производители Wisdom technologies
логотип Wisdom technologies логотип 

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WFP830 Даташит, Описание, Даташиты
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Wisdom Semiconductor
WFP830
N-Channel MOSFET
Features
RDS(on) (Max 1.4 )@VGS=10V
Gate Charge (Typical 25nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switching DC/DC converters, switch mode power
supply, DC-AC converters for uninterruped power supply, motor
control.
Symbol
1. Gate{
{ 2. Drain
◀▲
{ 3. Source
TO-220
123
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
500
5.0
3.0
20
±30
292
8.75
5.5
87.5
0.70
- 55 ~ 150
300
Value
Typ.
-
0.5
-
Max.
1.43
-
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W









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WFP830 Даташит, Описание, Даташиты
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
500 --
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.50
IDSS Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
-- --
-- --
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
-- --
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 2.5 A
2.0 --
4.0
-- 1.15 1.40
(Note 4)
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 680 900
-- 85 110
-- 15 20
V
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 250V, ID = 5.0 A,
RG = 25
-- 20 50
-- 40 90
-- 90 190
-- 45 100
VDS = 400 V, ID = 5.0A, (Note 4, 5) -- 25 33
VGS = 10 V
-- 5
--
-- 10
--
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 5.0
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 20
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.0 A
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 5.0 A,
-- 250
dIF / dt = 100 A/µs
-- 2.2
(Note 4)
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21.0mH, IAS = 5.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 5.0A, di/dt 300µA/s, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC









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WFP830 Даташит, Описание, Даташиты
Typical Characteristics
Top :
101
15V.0GSV
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom: 5.0 V
100
10-1
10-1
Notes :
1. 250µs Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
6
5
VGS = 10V
4
VGS = 20V
3
2
Note : TJ = 25
1
0 3 6 9 12 15
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1800
1500
1200
900
600
300
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
Crss
Notes :
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100
10-1
2
150oC
25oC
-55oC
Notes :
1.
2.
V25DS0µ=s40PVulse
Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1.
2.
2V5GS0µ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
12
10 VDS = 100V
VDS = 250V
8 VDS = 400V
6
4
2
Note : ID = 5.0 A
0
0 4 8 12 16 20 24 28
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics










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