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PDF NP83P06PDG Data sheet ( Hoja de datos )
| Número de pieza | NP83P06PDG | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP83P06PDG
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
NP83P06PDG-E1-AY Note
NP83P06PDG-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-263 (MP-25ZP)
FEATURES
• Super low on-state resistance
RDS(on)1 = 8.8 mΩ MAX. (VGS = −10 V, ID = −41.5 A)
RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41.5 A)
• High current rating: ID(DC) = m83 A
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
−60
m20
m83
m249
150
1.8
175
−55 to +175
49
240
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.0
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18691EJ3V0DS00 (3rd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
15 VGS = −4.5 V
10
5
0
-75
−10V
ID = −41.5 A
Pulsed
-25 25 75 125 175
Tch - Channel Temperature - °C
225
1000
100
SWITCHING CHARACTERISTICS
td(off)
tf
td(on)
10 tr
VDD = −30 V
VGS = −10 V
RG = 0 Ω
1
-0.1 -1
-10
ID - Drain Current - A
-100
-1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-100
-10 VGS = −10 V
-1
0V
-0.1
-0.01
0
Pulsed
0.5 1
VF(S-D) - Source to Drain Voltage - V
1.5
NP83P06PDG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
Coss
1000
VGS = 0 V
f = 1 MHz
100
-0.1
-1
Crss
-10
VDS - Drain to Source Voltage - V
-100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-60 -12
-50 VDD = −48 V
−30 V
-40 −12 V
-10
-8
-30 -6
-20 VGS -4
-10
0
0
VDS
40 80
-2
ID = −83 A
0
120 160 200
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = −100 A/μs
VGS = 0 V
1
-0.1 -1
-10
IF - Diode Forward Current - A
-100
Data Sheet D18691EJ3V0DS
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NP83P06PDG.PDF ] | |
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