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PDF HMC474MP86 Data sheet ( Hoja de datos )
| Número de pieza | HMC474MP86 | |
| Descripción | SiGe HBT GAIN BLOCK MMIC AMPLIFIER | |
| Fabricantes | Hittite | |
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HMC474MP86 / 474MP86E
Designer’s Kit
5
Available
Typical Applications
v01.0705
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
Features
The HMC474MP86 & HMC474MP86E is an ideal
RF/IF gain block for:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Functional Diagram
Gain: 15.5 dB
P1dB Output Power: +8 dBm
Output IP3: +22 dBm
Cascadable 50 Ohm I/Os
Single Supply: +3V to +10V
Included in the HMC-DK001 Designer’s Kit
General Description
The HMC474MP86 & HMC474MP86E are general
purpose SiGe Heterojunction Bipolar Transistor (HBT)
Gain Block MMIC SMT amplifiers covering DC to 6
GHz. This Micro-P packaged amplifier can be used
as a cascadable 50 Ohm RF/IF gain stage with up
to +10 dBm output power. The HMC474MP86 &
HMC474MP86E offer 15.5 dB of gain with a +22 dBm
output IP3 at 850 MHz while requiring only 25 mA from
a single positive supply. The Darlington feedback pair
used results in reduced sensitivity to normal process
variations and excellent gain stability over temperature
while requiring a minimal number of external bias
components.
Electrical Specifications, Vs= 5.0 V, Rbias= 110 Ohm, TA = +25° C
Parameter
Min.
Typ.
Gain
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
5.0 - 6.0 GHz
13 15.5
12 14
10 12
9 11
8 10
79
Gain Variation Over Temperature
DC - 6.0 GHz
0.01
Input Return Loss
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 5.0 GHz
5.0 - 6.0 GHz
15
16
19
16
Output Return Loss
DC - 5.0 GHz
5.0 - 6.0 GHz
17
13
Reverse Isolation
DC - 4.0 GHz
17
Output Power for 1 dB Compression (P1dB)
0.5 - 4.0 GHz
4.0 - 5.0 GHz
5.0 - 6.0 GHz
5
4
3
8
7
6
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 4.0 GHz
4.0 - 5.0 GHz
5.0 - 6.0 GHz
22
20
17
Noise Figure
DC - 5.0 GHz
5.0 - 6.0 GHz
3
3.4
Supply Current (Icq)
25
Note: Data taken with broadband bias tee on device output.
Max.
0.015
Units
dB
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
5 - 420
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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5
Pin Descriptions
Pin Number
Function
1 RFIN
3 RFOUT
2, 4 GND
v01.0705
HMC474MP86 / 474MP86E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
Description
This pin is DC coupled.
An off chip DC blocking capacitor is required.
RF output and DC Bias (Vcc) for the output stage.
These pins must be connected to RF/DC ground.
Interface Schematic
Application Circuit
Recommended Bias Resistor Values
for Icc= 25 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
3V 5V 6V 8V
RBIAS VALUE
30 Ω 110 Ω 150 Ω 240 Ω
RBIAS POWER RATING
1/8 W 1/8 W 1/4 W 1/2 W
10V
300 Ω
1/2 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
5 - 424
Recommended Component Values for Key Application Frequencies
Component
L1
C1, C2
50
270 nH
0.01 μF
900
56 nH
100 pF
1900
18 nH
100 pF
Frequency (MHz)
2200
2400
18 nH
15 nH
100 pF
100 pF
3500
8.2 nH
100 pF
5200
6.8 nH
100 pF
5500
3.3 nH
100 pF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC474MP86.PDF ] | |
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