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GE6679 PDF даташит

Спецификация GE6679 изготовлена ​​​​«GTM» и имеет функцию, называемую «P-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв GE6679
Описание P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители GTM
логотип GTM логотип 

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GE6679 Даташит, Описание, Даташиты
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Pb Free Plating Product
ISSUED DATE :2005/06/28
REVISED DATE :
GE6679
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
9m
-75A
Description
The GE6679 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications and suited for low
voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
VDS
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
-30
25
-75
-50
-300
89
0.71
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
1.4
62
Unit
/W
/W
GE6679
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GE6679 Даташит, Описание, Даташиты
ISSUED DATE :2005/06/28
REVISED DATE :
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
-30
-
-1.0
-
-
-
-0.03
-
34
-
-
-
-3.0
-
100
V VGS=0, ID=-250uA
V/ Reference to 25 , ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-10V, ID=-24A
nA VGS= 25V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- -1 uA VDS=-30V, VGS=0
- -25 uA VDS=-24V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 9 m VGS=-10V, ID=-30A
- 15
VGS=-4.5V, ID=-24A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 42 67
ID=-16A
Qgs - 6 - nC VDS=-24V
Qgd - 25 -
VGS=-4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 11 -
VDS=-15V
Tr
Td(off)
-
-
35
58
-
-
ID=-16A
ns VGS=-10V
RG=3.3
Tf - 78 -
RD=0.94
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 2870 4590
VGS=0V
- 960 -
pF VDS=-25V
- 740 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
47
43
Max.
-1.2
-
-
Unit Test Conditions
V IS=-24A, VGS=0V
ns IS=-16, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GE6679
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GE6679 Даташит, Описание, Даташиты
Characteristics Curve
ISSUED DATE :2005/06/28
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GE6679
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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Номер в каталогеОписаниеПроизводители
GE6679P-CHANNEL ENHANCEMENT MODE POWER MOSFETGTM
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