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GE85L02 PDF даташит

Спецификация GE85L02 изготовлена ​​​​«GTM» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв GE85L02
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители GTM
логотип GTM логотип 

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GE85L02 Даташит, Описание, Даташиты
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Pb Free Plating Product
ISSUED DATE :2005/12/06
REVISED DATE :
GE85L02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
25V
6m
85A
Description
The GE85L02 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The through-hole version (TO-220) is available for low-profile applications and suited for low voltage
applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
25
±20
85
53
310
96
0.77
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
1.3
62
Unit
/W
/W
GE85L02
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GE85L02 Даташит, Описание, Даташиты
ISSUED DATE :2005/12/06
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
25
-
1.0
-
-
-
0.037
-
45
-
-
-
3.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=40A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 1 uA VDS=25V, VGS=0
- 25 uA VDS=20V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
- 6 m VGS=10V, ID=40A
- 10
VGS=4.5V, ID=20A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 49 -
ID=40A
Qgs - 5 - nC VDS=20V
Qgd - 36.5 -
VGS=5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 12 -
- 85 -
- 35 -
- 110 -
VDS=15V
ID=25A
ns VGS=10V
RG=3.3
RD=0.6
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1510 -
- 950 -
- 450 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.26
85
310
Unit Test Conditions
V IS=85A, VGS=0V, Tj=25
A VD=VG=0V, VS=1.26V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GE85L02
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GE85L02 Даташит, Описание, Даташиты
Characteristics Curve
ISSUED DATE :2005/12/06
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
GE85L02
Fig 6. Type Power Dissipation
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