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GE88LS02 PDF даташит

Спецификация GE88LS02 изготовлена ​​​​«GTM» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв GE88LS02
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители GTM
логотип GTM логотип 

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GE88LS02 Даташит, Описание, Даташиты
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Pb Free Plating Product
ISSUED DATE :2006/01/05
REVISED DATE :
GE88LS02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
25V
5m
75A
Description
The GE88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast
switching performance.
The through-hole version (TO-220) is available for low-profile applications and suited for low voltage
applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current, VGS@4.5V
Continuous Drain Current, VGS@4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
25
±20
75
62.5
350
96
0.75
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
1.3
62
Unit
/W
/W
GE88LS02
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GE88LS02 Даташит, Описание, Даташиты
ISSUED DATE :2006/01/05
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
25
-
1.0
-
-
-
0.02
-
29
-
-
-
3.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=30A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 1 uA VDS=25V, VGS=0
- 100 uA VDS=20V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
-
-
5 m VGS=10V, ID=45A
7 VGS=4.5V, ID=30A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 28 45
ID=30A
Qgs - 5 - nC VDS=20V
Qgd - 19 -
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 10 -
VDS=15V
Tr
Td(off)
-
-
80
37
-
-
ID=30A
ns VGS=10V
RG=3.3
Tf - 85 -
RD=0.5
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 2070 3310
VGS=0V
- 990 -
pF VDS=25V
- 300 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
50
51
Max.
1.3
-
-
Unit Test Conditions
V IS=45A, VGS=0V
ns IS=30A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GE88LS02
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GE88LS02 Даташит, Описание, Даташиты
Characteristics Curve
ISSUED DATE :2006/01/05
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GE88LS02
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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