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GS3018 PDF даташит

Спецификация GS3018 изготовлена ​​​​«GTM» и имеет функцию, называемую «N-CHANNEL MOSFET».

Детали детали

Номер произв GS3018
Описание N-CHANNEL MOSFET
Производители GTM
логотип GTM логотип 

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GS3018 Даташит, Описание, Даташиты
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GS3018
N-CHANNEL MOSFET
Description
N-channel enhancement-mode MOSFET
Features
Low on-resistance.
Fast switching speed.
Low voltage drive (2.5V) makes this device ideal for portable equipment.
Easily designed drive circuits.
Easy to parallel.
Package Dimensions
Pb Free Plating Product
ISSUED DATE :2004/11/24
REVISED DATE :2005/12/02C
BVDSS
RDS(ON)
ID
30V
8
115mA
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=100
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.8 1.10
0 0.10
0.8 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Ratings
30
20
115
75
800
0.225
0.0018
-40 ~ +150
Unit
V
V
mA
mA
mA
W
W/
Ratings
556
Unit
/W
GS3018
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GS3018 Даташит, Описание, Даташиты
ISSUED DATE :2004/11/24
REVISED DATE :2005/12/02C
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V VGS=0, ID=250uA
Gate Threshold Voltage
VGS(th)
0.8
-
2.0
V VDS=VGS, ID=0.1mA
Forward Transconductance
gfs 20 -
- mS VDS=3V, ID=10mA
Gate-Source Leakage Current
IGSS - - ±1 uA VGS= ±20V
Drain-Source Leakage Current
IDSS - - 1 uA VDS=30V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
58
7 13
VGS=4V, ID=10mA
VGS=2.5V, ID=1mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Ciss - - 50
VGS=0V
Coss - - 25 pF VDS=5V
Crss - - 5
f=1.0MHz
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Forward On Voltage2
VSD - 0.84 1.5 V IS=100mA, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270 /W when mounted on Min. copper pad.
GS3018
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GS3018 Даташит, Описание, Даташиты
Characteristics Curve
ISSUED DATE :2004/11/24
REVISED DATE :2005/12/02C
GS3018
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