GS401SD PDF даташит
Спецификация GS401SD изготовлена «GTM» и имеет функцию, называемую «SURFACE MOUNT SCHOTTKY BARRIER DIODE». |
|
Детали детали
Номер произв | GS401SD |
Описание | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
Производители | GTM |
логотип |
2 Pages
No Preview Available ! |
www.DataSheet4U.com
CORPORATION ISSUED DATE :2005/12/20
REVISED DATE :2006/05/24B
GS401SD
S U RFAC E MO U NT, S CH OTT K Y B AR R IE R DI OD E
VOLTAGE 30V, CURRENT 0. 2A
Description
The GS401SD is high frequency rectification for switching power supply.
Package Dimensions
Absolute Maximum Ratings at TA = 25
Parameter
Junction Temperature
Storage Temperature
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
Maximum Average Forward Rectified Current
Total Power Dissipation
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Symbol
Tj
Tstg
VRRM
VRMS
VDC
IFSM
CJ
Io
PD
Ratings
+125
-55 ~ +125
30
21
30
3.0
40
0.2
225
Unit
V
V
V
A
pF
A
mW
Electrical Characteristics (at TA = 25 unless otherwise noted)
Parameter
Symbol Min.
Typ.
Max.
Reverse Breakdown Voltage
V(BR)R
30
-
-
Maximum Instantaneous Forward Voltage
VF
-
- 500
Maximum Average Reverse Current
IR -
-
- 50
- 100
Notes: 1. Measured at 1.0 MHz and 0 reverse bias voltage.
2. ESD sensitive product handling required.
Unit Test Conditions
V IR=100 A
mV IF=200mA
A VR1=10V
A VR2=30V
GS401SD
Page: 1/2
No Preview Available ! |
Characteristics Curve
CORPORATION ISSUED DATE :2005/12/20
REVISED DATE :2006/05/24B
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GS401SD
Page: 2/2
Скачать PDF:
[ GS401SD.PDF Даташит ]
Номер в каталоге | Описание | Производители |
GS401SD | SURFACE MOUNT SCHOTTKY BARRIER DIODE | GTM |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |