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PDF GS420SD Data sheet ( Hoja de datos )
| Número de pieza | GS420SD | |
| Descripción | SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
| Fabricantes | GTM | |
| Logotipo |  |
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CORPORATION ISSUED DATE :2005/12/20
REVISED DATE :
GS420SD
S U RFAC E MO U NT, S CH OTT K Y B AR R IE R DI OD E
VOLTAGE 40V, CURRENT 0. 1A
Description
The GS420SD is designed for low power rectification.
Package Dimensions
Absolute Maximum Ratings at TA = 25
Parameter
Junction Temperature
Storage Temperature
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
Maximum Average Forward Rectified Current
Total Power Dissipation
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Symbol
Tj
Tstg
VRRM
VRMS
VDC
IFSM
CJ
Io
PD
Ratings
+125
-40 ~ +125
40
28
40
1.0
6.0
0.1
225
Unit
V
V
V
A
pF
A
mW
Electrical Characteristics (at TA = 25 unless otherwise noted)
Parameter
Symbol Min.
Typ.
Max.
Reverse Breakdown Voltage
V(BR)R
40
-
-
Maximum Instantaneous Forward Voltage
VF
-
- 450
Maximum Average Reverse Current
IR -
- 1.0
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 10 volts.
2. ESD sensitive product handling required.
Unit Test Conditions
V IR=100 A
mV IF=10mA
uA VR=10V
GS420SD
Page: 1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GS420SD.PDF ] | |
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