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GS74104J PDF даташит

Спецификация GS74104J изготовлена ​​​​«GSI Technology» и имеет функцию, называемую «1M x 4 4Mb Asynchronous SRAM».

Детали детали

Номер произв GS74104J
Описание 1M x 4 4Mb Asynchronous SRAM
Производители GSI Technology
логотип GSI Technology логотип 

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GS74104J Даташит, Описание, Даташиты
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GS74104TP/J
SOJ, TSOP
Commercial Temp
Industrial Temp
Features
1M x 4
4Mb Asynchronous SRAM
8, 10, 12, 15 ns
3.3 V VDD
Center VDD and VSS
SOJ 1M x 4-Pin Configuraton
• Fast access time: 8, 10, 12, 15 ns
• CMOS low power operation: 150/125/110/90 mA at
minimum cycle time.
• Single 3.3 V ± 0.3 V power supply
• All inputs and outputs are TTL-compatible
• Fully static operation
• Industrial Temperature Option: –40° to 85°C
• Package line up
J: 400 mil, 32-pin SOJ package
TP: 400 mil, 44-pin TSOP Type II package
Description
The GS74104 is a high speed CMOS Static RAM organized as
1,048,576 words by 4 bits. Static design eliminates the need for
external clocks or timing strobes. The GS operates on a single
3.3 V power supply and all inputs and outputs are TTL-com-
patible. The GS74104 is available in 400 mil SOJ and 400 mil
TSOP Type-II packages.
A4 1
A3 2
A2 3
A1 4
32
31
30
29
A0 5
28
CE 6
DQ1 7
32-pin
27
26
VDD
8
400 mil SOJ
25
VSS 9
24
DQ2 10
23
WE 11
22
A19 12
21
A18 13
20
A17 14
19
A16 15
18
A15 16
17
TSOP-II 1M x 4-Pin Configuration
A5
A6
A7
A8
A9
OE
DQ4
VSS
VDD
DQ3
A10
A11
A12
A13
A14
NC
Pin Descriptions
Symbol
A0–A19
DQ1–DQ4
CE
WE
OE
VDD
VSS
NC
Description
Address input
Data input/output
Chip enable input
Write enable input
Output enable input
+3.3 V power supply
Ground
No connect
NC 1
44 NC
NC 2
43 NC
NC 3
42 NC
A4 4
41 A5
A3 5
40 A6
A2 6
39 A7
A1 7
38 A8
A0 8
37 A9
CE 9
36 OE
DQ1 10
35 DQ4
VDD 11 44-pin 34 VSS
VSS
12 400 mil TSOP II 33
VDD
DQ2 13
32 DQ3
WE 14
31 A10
A19 15
30 A11
A18 16
29 A12
A17 17
28 A13
A16 18
27 A14
A15 19
26 NC
NC 20
25 NC
NC 21
24 NC
NC 22
23 NC
Rev: 1.07 1/2001
1/12 © 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.









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GS74104J Даташит, Описание, Даташиты
Block Diagram
Truth Table
CE OE
HX
LL
LX
LH
Note: X: “H” or “L”
A0 Row
Decoder
Address
Input
Buffer
A19
CE
WE
OE
Control
Memory Array
Column
Decoder
I/O Buffer
DQ1 DQ4
WE DQ1 to DQ8
X Not Selected
H Read
L Write
H High Z
GS74104TP/J
VDD Current
ISB1, ISB2
IDD
Rev: 1.07 1/2001
2/12 © 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.









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GS74104J Даташит, Описание, Даташиты
GS74104TP/J
Absolute Maximum Ratings
Parameter
Supply Voltage
Input Voltage
Output Voltage
Allowable power dissipation
Storage temperature
Symbol
VDD
VIN
VOUT
PD
TSTG
Rating
–0.5 to +4.6
–0.5 to VDD +0.5
(4.6 V max.)
–0.5 to VDD +0.5
(4.6 V max.)
0.7
–55 to 150
Unit
V
V
V
W
oC
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec-
ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.
Recommended Operating Conditions
Parameter
Supply Voltage for -10/12/15
Supply Voltage for -8
Input High Voltage
Input Low Voltage
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
Symbol
VDD
VDD
VIH
VIL
TAc
TAI
Min
3.0
3.135
2.0
–0.3
0
–40
Typ Max Unit
3.3 3.6
V
3.3 3.6
V
— VDD +0.3 V
— 0.8 V
— 70 oC
— 85 oC
Note:
1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Rev: 1.07 1/2001
3/12 © 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.










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