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GS74108J PDF даташит

Спецификация GS74108J изготовлена ​​​​«GSI Technology» и имеет функцию, называемую «512K x 8 4Mb Asynchronous SRAM».

Детали детали

Номер произв GS74108J
Описание 512K x 8 4Mb Asynchronous SRAM
Производители GSI Technology
логотип GSI Technology логотип 

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GS74108J Даташит, Описание, Даташиты
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SOJ, TSOP
Commercial Temp
Industrial Temp
512K x 8
4Mb Asynchronous SRAM
GS74108TP/J
8, 10, 12, 15ns
3.3V VDD
Center VDD & VSS
Features
• Fast access time: 8, 10, 12, 15ns
• CMOS low power operation: 150/125/110/90 mA at min. cycle time.
• Single 3.3V ± 0.3V power supply
• All inputs and outputs are TTL compatible
• Fully static operation
• Industrial Temperature Option: -40° to 85°C
• Package line up
J: 400mil, 36 pin SOJ package
TP: 400mil, 44 pin TSOP Type II package
Description
The GS74108 is a high speed CMOS static RAM organized as
524,288-words by 8-bits. Static design eliminates the need for exter-
nal clocks or timing strobes. Operating on a single 3.3V power supply
and all inputs and outputs are TTL compatible. The GS74108 is avail-
able in 400 mil SOJ and 400 mil TSOP Type-II packages.
Pin Descriptions
Symbol
A0 to A18
DQ1 to DQ8
CE
WE
OE
VDD
VSS
NC
Description
Address input
Data input/output
Chip enable input
Write enable input
Output enable input
+3.3V power supply
Ground
No connect
SOJ 512K x 8 Pin Configuration
A4 1
A3 2
A2 3
A1 4
A0 5
CE 6
DQ1 7
DQ2 8
VDD 9
VSS 10
DQ3 11
DQ4 12
WE 13
A17 14
A16 15
A15 16
A14 17
A13 18
36 pin
400mil SOJ
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
NC
A5
A6
A7
A8
OE
DQ8
DQ7
VSS
VDD
DQ6
DQ5
A9
A10
A11
A12
A18
NC
Rev: 1.06 7/2000
1/12
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.









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GS74108J Даташит, Описание, Даташиты
TSOP-II 512K x 8 Pin Configuration
NC 1
NC 2
A4 3
A3 4
A2 5
A1 6
A0 7
CE 8
DQ1 9
DQ2 10
VDD 11 44 pin
VSS 12 400mil TSOP II
DQ3 13
DQ4 14
WE 15
A17 16
A16 17
A15 18
A14 19
A13 20
NC 21
NC 22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
NC
A5
A6
A7
A8
OE
DQ8
DQ7
VSS
VDD
DQ6
DQ5
A9
A10
A11
A12
A18
NC
NC
NC
Block Diagram
A0 Row
Address Decoder
Input
Buffer
A18
CE
WE
OE
Control
Memory Array
Column
Decoder
I/O Buffer
DQ1 DQ8
GS74108TP/J
Rev: 1.06 7/2000
2/12
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.









No Preview Available !

GS74108J Даташит, Описание, Даташиты
GS74108TP/J
Truth Table
CE OE
HX
LL
LX
LH
Note: X: “H” or “L”
WE
X
H
L
H
DQ1 to DQ8
Not Selected
Read
Write
High Z
VDD Current
ISB1, ISB2
IDD
Absolute Maximum Ratings
Parameter
Supply Voltage
Input Voltage
Output Voltage
Allowable power dissipation
Storage temperature
Symbol
VDD
VIN
VOUT
PD
TSTG
Rating
-0.5 to +4.6
-0.5 to VDD+0.5
(4.6V max.)
-0.5 to VDD+0.5
(4.6V max.)
0.7
-55 to 150
Unit
V
V
V
W
oC
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Rev: 1.06 7/2000
3/12
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, Giga Semiconductor, Inc.










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