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6HN04MH PDF даташит

Спецификация 6HN04MH изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «N-Channel Silicon MOSFET».

Детали детали

Номер произв 6HN04MH
Описание N-Channel Silicon MOSFET
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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6HN04MH Даташит, Описание, Даташиты
www.DataSheet4U.com
Ordering number : ENA0365
6HN04MH
6HN04MH
Features
4V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
60
±20
200
800
0.6
150
--55 to +150
Unit
V
V
mA
mA
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : FB
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=100µA
VDS=10V, ID=100mA
ID=100mA, VGS=10V
ID=50mA, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
60
1.2
140
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
240 mS
1.8 2.4
2.6 3.7
27 pF
8.6 pF
4.4 pF
13.5
ns
11.5 ns
81 ns
39 ns
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70306PE MS IM TB-00002385 No. A0365-1/4









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6HN04MH Даташит, Описание, Даташиты
6HN04MH
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=30V, VGS=10V, ID=200mA
VDS=30V, VGS=10V, ID=200mA
VDS=30V, VGS=10V, ID=200mA
IS=200mA, VGS=0V
Ratings
min typ max
Unit
1.88
nC
0.4 nC
0.37
nC
0.85
1.2 V
Package Dimensions
unit : mm (typ)
7019A-003
2.0 0.15
3
0 to 0.02
12
0.65 0.3
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=30V
ID=200mA
RL=150
D VOUT
Rg
6HN04MH
P.G 50S
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
Rg=1.2k
ID -- VDS
200
180
160
140
120 VGS=3V
100
80
60
40
20
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT11263
RDS(on) -- VGS
5.5
Ta=25°C
5.0
4.5
4.0
3.5
100mA
3.0
2.5
ID=50mA
2.0
1.5
1.0
0.5
0
0 2 4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS -- V IT11265
300
VDS=10V
250
ID -- VGS
200
150
100
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT11264
RDS(on) -- Ta
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
IIDD==5100m0mAA, V, VGGS=S4=V10V
1.5
1.0
0.5
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT11266
No. A0365-2/4









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6HN04MH Даташит, Описание, Даташиты
6HN04MH
7
VDS=10V
5
3
2
0.1
7
5
3
2
yfs-- ID
25°C
75°C
0.01
1.0
3
2
2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Drain Current, ID -- mA
SW Time -- ID
IT11267
VDD=30V
VGS=10V
100 td(off)
7
5 tf
3
2
td(on)
10 tr
7
5
0.01
23
10
VDS=30V
9 ID=200mA
5 7 0.1
23
Drain Current, ID -- A
VGS -- Qg
8
5 7 1.0
IT11269
7
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Total Gate Charge, Qg -- nC
IT11271
PD -- Ta
0.7
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
0.4
7
5
3
2
IS -- VSD
VGS=0V
0.5 0.6 0.7 0.8 0.9 1.0 1.1
Diode Forward Voltage, VSD -- V IT11268
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
10 Coss
7
Crss
5
3
2
0 5 10 15 20
Drain-to-Source Voltage, VDS -- V IT11270
ASO
2
1.0 IDP=800mA
7
5
3 ID=200mA
2
0.1
7
5
10µs
10ms 1ms100µs
100ms
3
2
0.01 Operation in this
7 area is limited by RDS(on).
5
3 Ta=25°C
2 Single pulse
0.001 Mounted on a ceramic board (900mm2!0.8mm)
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
5 7100
Drain-to-Source Voltage, VDS -- V IT11272
0.6
0.5
0.4
0.3
0.2
0.1
Mounted on a ceramic board (900mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT11273
No. A0365-3/4










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Номер в каталогеОписаниеПроизводители
6HN04MHN-Channel Silicon MOSFETSanyo Semicon Device
Sanyo Semicon Device
6HN04MHN-Channel Silicon MOSFETON Semiconductor
ON Semiconductor

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