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PDF H5N2522FN Data sheet ( Hoja de datos )
| Número de pieza | H5N2522FN | |
| Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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H5N2522FN
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
1
23
G
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
REJ03G1573-0210
Rev.2.10
May 08, 2007
D
1. Gate
2. Drain
3. Source
S
Ratings
250
±30
12
48
12
48
12
9
35
3.57
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1573-0210 Rev.2.10 May 08, 2007
Page 1 of 6
1 page  
H5N2522FN
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
D=1
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
1shot
pulse
0.001
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 3.57°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1 m 10 m 100 m
Pulse Width PW (S)
1
10 100
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 120V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
REJ03G1573-0210 Rev.2.10 May 08, 2007
Page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet H5N2522FN.PDF ] | |
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