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PDF HAT2170H Data sheet ( Hoja de datos )
| Número de pieza | HAT2170H | |
| Descripción | Silicon N Channel MOSFET Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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HAT2170H
Silicon N Channel MOS FET
Power Switching
Features
• High speed switching
• Capable of 7 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 3.3 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
5
1 234
4
G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAPNote2
EARNote2
PchNote3
θch-C
Tch
Tstg
REJ03G0121-0500
Rev.5.00
Sep 26, 2005
5
D
SSS
123
1, 2, 3 Source
4 Gate
5 Drain
Ratings
40
±20
45
180
45
30
72
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.5.00, Sep 26, 2005, page 1 of 7
1 page  
HAT2170H
Reverse Drain Current vs.
Source to Drain Voltage
50
40
10 V
5V
30
VGS = 0
20
10
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
100
IAP = 30 A
80 VDD = 15 V
duty < 0.1 %
Rg ≥ 50 Ω
60
40
20
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.01
0.02
0.01
1shot
pulse
10 µ 100 µ
θch - c(t) = γs (t) • θch - c
θch - c = 4.17°C/ W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Vin
15 V
Avalanche Test Circuit
VDS
Monitor
Rg
50 Ω
L
IAP
Monitor
D. U. T
VDD
Avalanche Waveform
EAR =
1
2
L • IAP2 •
VDSS
VDSS – VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
Rev.5.00, Sep 26, 2005, page 5 of 7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HAT2170H.PDF ] | |
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