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HAT2179R PDF даташит

Спецификация HAT2179R изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel MOS FET High Speed Power Switching».

Детали детали

Номер произв HAT2179R
Описание Silicon N Channel MOS FET High Speed Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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HAT2179R Даташит, Описание, Даташиты
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HAT2179R
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low drive current
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8765
1234
4
G
5678
DDDD
SSS
123
REJ03G1570-0100
Rev.1.00
Jul 06, 2007
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
VDSS
VGSS
600
±30
Drain current
Drain peak current
ID
ID
Note1
(pulse)
0.7
2.0
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
IDR
IDR
Note1
(pulse)
Pch Note2
0.7
2.0
2.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
°C
°C
REJ03G1570-0100 Rev.1.00 Jul 06, 2007
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HAT2179R Даташит, Описание, Даташиты
HAT2179R
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
600
V ID = 10 mA, VGS = 0
Zero gate voltage drain current
IDSS — — 1 µA VDS = 600 V, VGS = 0
Gate to source leak current
IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
VGS(off)
3.0
5.0
|yfs| 0.8 1.2 —
RDS(on)
3.5
4.5
V VDS = 10 V, ID = 1 mA
S ID = 0.4 A, VDS = 10 V Note3
ID = 0.4 A, VGS = 10 V Note3
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss — 280 —
Coss
31
Crss — 3.8 —
pF VDS = 25 V
pF VGS = 0
pF f = 1 MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse
recovery time
Notes: 3. Pulse test
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
— 24 —
— 15 —
— 50 —
— 58 —
— 10 —
— 1.6 —
— 5.4 —
— 0.8 1.2
— 200 —
ns ID = 0.4 A
ns VGS = 10 V
ns RL = 750
ns Rg = 10
nC VDD = 480 V
nC VGS = 10 V
nC ID = 0.7 A
V IF = 0.7 A, VGS = 0 Note3
ns IF = 0.7 A, VGS = 0
diF/dt = 100 A/µs
REJ03G1570-0100 Rev.1.00 Jul 06, 2007
Page 2 of 3









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HAT2179R Даташит, Описание, Даташиты
HAT2179R
Package Dimensions
Package Name
SOP-8
JEITA Package Code
P-SOP8-3.95 × 4.9-1.27
RENESAS Code
PRSP0008DD-D
Previous Code
FP-8DAV
MASS[Typ.]
0.085g
*1 D
8
5
Index mark
1
Z
4
*3 bp
e
xM
y
Ordering Information
Part No.
HAT2179R-EL-E
Quantity
2500 pcs
bp
Terminal cross section
(Ni/Pd/Au plating)
L1
L
Detail F
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
Reference Dimension in Millimeters
Symbol Min Nom Max
D 4.90 5.3
E 3.95
A2
A1 0.10 0.14 0.25
A 1.75
bp 0.34 0.40 0.46
b1
c 0.15 0.20 0.25
c1
0° 8°
HE 5.80 6.10 6.20
e 1.27
x 0.25
y 0.1
Z 0.75
L 0.40 0.60 1.27
L1 1.08
Taping
Shipping Container
REJ03G1570-0100 Rev.1.00 Jul 06, 2007
Page 3 of 3










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Номер в каталогеОписаниеПроизводители
HAT2179RSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology

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