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Datasheet NTD5P06V Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | NTD5P06V | Power MOSFET, Transistor
MTD5P06V
Preferred Device
Power MOSFET 5 Amps, 60 Volts
P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor cont | ON Semiconductor | mosfet |
NTD Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | NTD | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o at 50 C (mA)
Max. Fwd. Voltage Drop at 25 C And I O V F (Volts)
o
Length L Fig.3
NTD 08 EDI rectifier | | |
2 | NTD | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o at 50 C (mA)
Max. Fwd. Voltage Drop at 25 C And I O V F (Volts)
o
Length L Fig.3
NTD 08 EDI rectifier | | |
3 | NTD08 | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o at 50 C (mA)
Max. Fwd. Voltage Drop at 25 C And I O V F (Volts)
o
Length L Fig.3
NTD 08 EDI rectifier | | |
4 | NTD10 | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o at 50 C (mA)
Max. Fwd. Voltage Drop at 25 C And I O V F (Volts)
o
Length L Fig.3
NTD 08 EDI rectifier | | |
5 | NTD106B | Thyristor/Diode Module Naina Semiconductor Ltd.
NTD106B
Features
Thyristor/Diode Module, 106A
• Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance
Voltage Ratings (TA = 25oC, unless otherwise noted)
Type nu Naina Semiconductor diode | | |
6 | NTD110N02R | Power MOSFET, Transistor NTD110N02R Power MOSFET
24 V, 110 A, N−Channel DPAK
Features
• • • • • •
Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC� ON mosfet | | |
7 | NTD110N02RG | Power MOSFET, Transistor NTD110N02R Power MOSFET
24 V, 110 A, N−Channel DPAK
Features
• • • • • •
Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC� ON mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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