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GFB75N03 PDF даташит

Спецификация GFB75N03 изготовлена ​​​​«General Semiconductor» и имеет функцию, называемую «N-Channel Enhancement-Mode MOSFET».

Детали детали

Номер произв GFB75N03
Описание N-Channel Enhancement-Mode MOSFET
Производители General Semiconductor
логотип General Semiconductor логотип 

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GFB75N03 Даташит, Описание, Даташиты
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GFB75N03
N-Channel Enhancement-Mode MOSFET
TGREENNCFHET®
TO-263AB
VDS 30V RDS(ON) 6.5mID 80A
New Product
G
D
0.380 (9.65)
0.420 (10.67)
0.21 (5.33)
Min.
D
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
S
0.42
(10.66)
0.320 (8.13)
0.360 (9.14)
PIN
GDS
Seating Plate
-T-
0.096 (2.43)
0.102 (2.59)
0.027 (0.686)
0.037 (0.940)
0.575 (14.60)
0.625 (15.88)
0.120 (3.05)
0.155 (3.94)
0.055 (1.39)
0.066 (1.68)
Dimensions in inches
and (millimeters)
0.014 (0.35)
0.020 (0.51)
0.100 (2.54)
0.130 (3.30)
0.63
(17.02)
0.33
(8.38)
Mounting Pad
Layout
0.08
(2.032)
0.24
(6.096)
0.12
(3.05)
Mechanical Data
Case: JEDEC TO-263 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any Weight: 1.3g
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(1)
VDS
30
VGS ±20
ID 80
Pulsed Drain Current
IDM 240
Maximum Power Dissipation
TA = 25°C
TA = 100°C
PD
69.4
27.8
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
Lead Temperature (1/8” from case for 5 sec.)
TL 275
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(2)
RθJC
RθJA
1.8
40
Notes: (1) Maximum DC current limited by the package
(2) 1-in2 2oz. Cu PCB mounted
Unit
V
A
W
°C
°C
°C/W
°C/W
5/1/01









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GFB75N03 Даташит, Описание, Даташиты
www.DataSheet4U.com
GFB75N03
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
Drain-Source On-State Resistance(1)
RDS(on)
VGS = 10V, ID = 38A
VGS = 4.5V, ID = 31A
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
VDS = 30V, VGS = 0V
Gate-Body Leakage
On-State Drain Current(1)
Forward Transconductance(1)
IGSS
ID(on)
gfs
VGS = ±20V, VDS = 0V
VDS 5V, VGS = 10V
VDS = 15V, ID = 38A
Dynamic
Total Gate Charge
VDS=15V, ID=38A, VGS=5V
Qg
Gate-Source Charge
Gate-Drain Charge
VDS = 15V, VGS = 10V
Qgs
ID = 38A
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VDD = 15V, RL = 15
ID 1A, VGEN = 10V
RG = 6
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 15V, VGS = 0V
f = 1.0MHZ
Source-Drain Diode
Max. Diode Forward Current IS
Diode Forward Voltage
VSD IS = 38A, VGS = 0V
Note:
(1) Pulse test; pulse width 300 µs, duty cycle 2%
Min
30
1.0
75
Typ Max
––
5.8 6.5
8.5 9.5
3.0
1.0
±100
––
61
32.5
63
11
11
13
16
94
38
3240
625
285
46
90
26
29
132
57
75
0.9 1.3
Unit
V
m
V
µA
nA
A
S
nC
ns
pF
A
V
VDD
ton toff
Switching
Test Circuit
VIN RD
D
VOUT
Switching
Waveforms
td(on)
tr td(off)
90%
tf
90 %
VGEN
RG
G
S
DUT
Output, VOUT
Input, VIN 10%
10%
50%
10%
INVERTED
90%
50%
PULSE WIDTH









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GFB75N03 Даташит, Описание, Даташиты
www.DataSheet4U.com
GFB75N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Output Characteristics
100
10V
4.5V
6.0V
80
4.0V
5.0V
3.5V
60
40
3.0V
20
VGS = 2.5V
0
01 2 3
4
VDS -- Drain-to-Source Voltage (V)
Fig. 3 – Threshold Voltage vs.
Temperature
1.7
ID = 250µA
1.5
1.3
1.1
0.9
0.7
0.5
--50 --25
0
25 50 75 100 125 150
TJ -- Junction Temperature (°C)
Fig. 5 – On-Resistance vs.
Junction Temperature
1.6
VGS = 10V
ID = 38A
1.4
Fig. 2 – Transfer Characteristics
80
VDS = 10V
70
60
50
40 TJ = 125°C
30
20
10
0
1
0.016
25°C
--55°C
234
VGS -- Gate-to-Source Voltage (V)
Fig. 4 – On-Resistance vs.
Drain Current
5
0.014
0.012
0.01
0.008
0.006
VGS = 4.5V
VGS = 10V
0.004
0.002
0
0 20 40 60 80 100
ID -- Drain Current (A)
1.2
1
0.8
0.6
--50 --25 0 25 50 75 100 125 150
TJ -- Junction Temperature (°C)










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Номер в каталогеОписаниеПроизводители
GFB75N03N-Channel Enhancement-Mode MOSFETGeneral Semiconductor
General Semiconductor

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