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PDF ON2152 Data sheet ( Hoja de datos )
| Número de pieza | ON2152 | |
| Descripción | Reflective photosensor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ON2152 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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wwwR.DeaflteacSthiveet4PUh.cootomsensors (Photo Reflectors)
CNZ2152 (ON2152)
Reflective photosensor
Non-contact point SW, object sensing
■ Overview
CNZ2152 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a high sensitivity Si phototransistor
is used as the light detecting element. The two elements are located
parallel in the same direction and objects are detected when passing
in front of the device.
Mark for
indicating
LED side
φ1.5
Unit: mm
16.0±0.3
14.0
+0.1
-0.2
φ2.2±0.2
■ Features
• Fast response
• High sensitivity
• High SN ratio
■ Applications
• Detection of paper, film and cloth • Optical mark reading
• Detection of coin and bill
• Detection of position and edge
• Start, end mark detection of magnetic tape
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Input (Light Reverse voltage
emitting diode) Forward current
Power dissipation *1
Output (Photo Collector-emitter voltage
transistor) (Base open)
VR
IF
PD
VCEO
3
100
150
20
Unit
V
mA
mW
V
(10.0)
φ0.9+-00..21
4-φ0.45
(2.54)
2 3 1: Cathode
2: Anode
3: Emitter
1 4 4: Collector
PRSTR104-001 Package
(Note) ( ) Dimension is reference
Emitter-collector voltage VECO
(Base open)
3
V
Collector current
IC 30 mA
Collector power dissipation *2 PC
150 mW
Temperature Operating ambient temperature Topr −25 to +85 °C
Storage temperature
Tstg −30 to +100 °C
Note) *1: Input power derating ratio is
2.0 mW/°C at Ta ≥ 25°C.
*2: Output power derating ratio is
2.0 mW/°C at Ta ≥ 25°C.
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Input Forward voltage
VF
characteristics Reverse current
IR
Output
Collector-emitter cutoff current ICEO
characteristics (Base open)
Transfer Collector current *1
characteristics
IC *2
IC *3
Collector-emitter saturation voltage VCE(sat)
Rise time
tr
Fall time
tf
IF = 100 mA
VR = 5 V
VCE = 10 V
VCC = 5 V, IF = 20 mA, RL = 100 Ω
IF = 100 mA, IC = 1 mA
VCC = 10 V, IC = 1 mA, RL = 100 Ω
Note) 1. Input and output are handled electrically.
2. This product is not designed to withstand radiation
3. *1: Output current measurement circuit (Ambient light is shut off completely)
IF IC VCC
Min Typ Max Unit
1.25 1.50 V
10 µA
0.05 2.00 µA
0.8 3.0
mA
500 µA
0.6 V
8 µs
8 µs
d = 5 mm *2: White paper (reflective ratio 90%)
*3: Tracing paper (paper SM-1 for 2nd original paper)
RL Test Paper
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00052BED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ON2152.PDF ] | |
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