DataSheet26.com

SDB75N03L PDF даташит

Спецификация SDB75N03L изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Logic Level E nhancement Mode Field Effect Transistor».

Детали детали

Номер произв SDB75N03L
Описание N-Channel Logic Level E nhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

6 Pages
scroll

No Preview Available !

SDB75N03L Даташит, Описание, Даташиты
www.DataSheet4U.com
S amHop Microelectronics C orp.
S DP /B 75N03L
May,2004 ver1.1
N-Channel Logic Level E nhancement Mode Field E ffect Transistor
4 P R ODUC T S UMMAR Y
F E AT UR E S
VDS S
30V
ID R DS (on) ( m W ) Max
7 @ VGS = 10V
70A
11 @ VGS = 4.5V
S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
GS
S DB S E R IE S
T O -263(DD-P AK )
G
D
S
S DP S E R IE S
TO-220
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
S ymbol
VDS
VGS
Limit
30
20
Drain C urrent-C ontinuous @ TJ=125 C
-P ulsed a
ID
IDM
70
210
Drain-S ource Diode Forward C urrent
IS
75
Maximum P ower Dissipation @ Tc=25 C
Operating and S torage Temperature R ange
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
PD
TJ, TSTG
R JC
R JA
75
-65 to 175
2
62.5
1
Unit
V
V
A
A
A
W
C
C /W
C /W









No Preview Available !

SDB75N03L Даташит, Описание, Даташиты
www.DataSheet4U.com
S DP /B 75N03L
E LE CTR ICAL CHAR ACTE R IS TICS (TC =25 C unless otherwise noted)
4 Parameter
S ymbol Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS a
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
BVDSS VGS =0V, ID =250uA
30 35
V
IDSS VDS =24V, VGS = 0V
10 uA
IGSS VGS = 16V, VDS =0V
100 nA
V G S (th)
R DS(ON)
VDS =VGS, ID = 250uA
VGS = 10V, ID = 37A
VGS = 4.5V, ID = 30A
1 1.5 3 V
6 7 m ohm
9 11 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS b
ID(ON)
gFS
VGS = 10V, VDS = 10V
VDS = 10V, ID = 37A
60
47
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
SWITCHING CHARACTERISTICS b
C IS S
COSS
CRSS
VDS =15V, VGS = 0V
f =1.0MHZ
1900
960
320
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) VDD = 15V,
tr
ID =1A,
VGEN = 10V
tD(OFF) R G =1.8 ohm
tf R L =0.20 ohm
15
12.5
5.5
6.5
Total Gate Charge
Qg VDS=24V,ID =75A,VGS=10V
VDS=24V,ID =75A,VGS=4.5V
61
32
Gate-S ource Charge
Gate-Drain Charge
Qgs VDS =24V, ID = 75A,
Qgd VGS =10V
11
11
A
S
PF
PF
PF
ns
ns
ns
ns
nC
nC
nC
nC
2









No Preview Available !

SDB75N03L Даташит, Описание, Даташиты
www.DataSheet4U.com
S DP /B 75N03L
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS a
Diode Forward Voltage
VSD VGS = 0V, Is =37A
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
Min Typ Max Unit
0.93 1.3 V
4
40
V GS =10,9,8,7,6,5,4V
35
30
25
20
V GS =3V
15
10
5
0
0123 4 56
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
6000
5000
4000
3000
2000
C is s
1000
C os s
C rs s
0
0 5 10 15 20 25 30
V DS , Drain-to S ource Voltage (V )
F igure 3. C apacitance
25
25 C
20
15
10
-55 C
5
T J=125 C
0
01 2 3 4 56
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
2.2 V G S =10V
1.8 ID=37A
1.4
1.0
0.6
0.2
0
-50 -25 0 25 50 75 100 125
T j( C )
F igure 4. On-R es is tance Variation with
Te mpe ra ture
3










Скачать PDF:

[ SDB75N03L.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
SDB75N03LN-Channel Logic Level E nhancement Mode Field Effect TransistorSamHop Microelectronics
SamHop Microelectronics

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск