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SD008-17-51-21X PDF даташит

Спецификация SD008-17-51-21X изготовлена ​​​​«Advanced Photonix» и имеет функцию, называемую «(SD0xx-17-51-21X) High Speed si Pin Photodiode».

Детали детали

Номер произв SD008-17-51-21X
Описание (SD0xx-17-51-21X) High Speed si Pin Photodiode
Производители Advanced Photonix
логотип Advanced Photonix логотип 

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SD008-17-51-21X Даташит, Описание, Даташиты
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7
SD0XX-17-51-21X
High Speed Si Pin Photodiode
SD0XX-17-51-21X series features 3 high-speed silicon photodiodes that
have been specifically developed for the price-sensitive optical communication
applications, including fiber-optic LAN, VCSEL-based links, and
instrumentation. Designed to be fully depleted at low voltages, the devices
offer exceptionally low capacitance and fast responses. Typical speeds are
from 200 MHz for the large device up to 1GHz for the smallest active area.
Their excellent quantum efficiency, about 70% at 850nm, results in higher
sensitivity than that of many comparable devices but even higher QE’s are
available upon request for the most demanding applications.
All three devices come in rugged, hermetically sealed TO-46 packages that
are suitable for fiber couplers like SMA and ST connectors. The user has a
choice of flat (-211), domed (-214) or microball window (-218) caps. In
addition, almost any fiber connector style is also available upon request. The
assemblies are isolated from their housing, thus offering flexibility in biasing
and minimized EMI susceptibility.
Features
0.2, 0.5 & 1mm active dia.
High speed, up to 1GHz
Excellent QE
Low noise
Low bias voltage
Low capacitance
TO-46 and fiber packages
Wide operating temp range
Applications
Optical communication
High speed radiometry
Electro-Optical Characteristics
@ +23°, Vb=5V, unless otherwise noted
Device P/N
SD008-17-51-21X
SD020-17-51-21X
SD040-17-51-21X
Active Area Dia.
0.008” (0.2mm)
0.020”(0.5mm)
0.040” (1mm)
Dark Current
0.1 nA
0.15 nA
0.25 nA
Capacitance
@1MHz
0.3 pF
2 pF
10 pF
Rise Time
350 ps
1 ns
1.8 ns
Dark Noise
Density
5 fA/Hz
6 fA/Hz
8 fA/Hz
Absolute Maximum Ratings*
Storage Temperature
Operating Temperature
Lead Temperature
Reverse Bias Voltage
-55°C to +150°C
-40°C to +125°C
+300°C (soldering, 10 sec)
25V
*Operating beyond these limits may cause permanent damage to the device.









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Typical Performance Graphs
0.6
0.5
0.4
0.3
0.2
0.1
0.0
400
Spectral Responsivity @ Vb=5V, Ta=23°C
500 600 700 800 900 1000 1100
Wavelength (nm)
Small signal response
Rl = 50Ω, source: 850nm VCSEL
MECHANICAL DIMENSIONS AND PIN-
API reserves the right to change specifications without notification.
1240 Avenida Acaso, Camarillo, CA 93012
(805) 987-0146 Fax (805) 484-9935
www.advancedphotonix.com
Rev. 22 Feb, 2001
Preliminary










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Номер в каталогеОписаниеПроизводители
SD008-17-51-21X(SD0xx-17-51-21X) High Speed si Pin PhotodiodeAdvanced Photonix
Advanced Photonix

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