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NTD18N06L PDF даташит

Спецификация NTD18N06L изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTD18N06L
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTD18N06L Даташит, Описание, Даташиты
NTD18N06L, NTDV18N06L
Power MOSFET
18 A, 60 V, Logic Level N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
AEC Q101 Qualified − NTDV18N06L
These Devices are Pb−Free and are RoHS Compliant
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
TJ, Tstg
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 5.0 Vdc,
L = 1.0 mH, IL(pk) = 12 A, VDS = 60 Vdc)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
EAS
RqJC
RqJA
RqJA
60 Vdc
60 Vdc
Vdc
±15
±20
18
10
54
55
0.36
2.1
−55 to
+175
72
Adc
Apk
W
W/°C
W
°C
mJ
°C/W
2.73
100
71.4
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR−4 board using the minimum recommended
pad size.
2. When surface mounted to an FR−4 board using the 0.5 sq in drain pad size.
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V(BR)DSS
60 V
RDS(on) TYP
54 mW@5.0 V
ID MAX
18 A
(Note 1)
D
N−Channel
G
S
4
12
3
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
1
Gate
2
Drain
3
Source
A = Assembly Location*
18N6L = Device Code
Y = Year
WW = Work Week
G = Pb−Free Device
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 7
1
Publication Order Number:
NTD18N06L/D









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NTD18N06L Даташит, Описание, Даташиты
NTD18N06L, NTDV18N06L
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Vdc
60 70
− 57.6 − mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
IDSS
IGSS
mAdc
− − 1.0
− − 10
±100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Vdc
1.0 1.8 2.0
− 5.2 − mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 9.0 Adc)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 18 Adc)
(VGS = 5.0 Vdc, ID = 9.0 Adc, TJ = 150°C)
Forward Transconductance (Note 3) (VDS = 7.0 Vdc, ID = 9.0 Adc)
RDS(on)
VDS(on)
gFS
mW
− 54 65
Vdc
− 1.0 1.3
− 0.86 −
− 13.5 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
− 482 675 pF
− 166 230
− 56 80
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(VDD = 30 Vdc, ID = 18 Adc,
VGS = 5.0 Vdc,
RG = 9.1 W) (Note 3)
(VDS = 48 Vdc, ID = 18 Adc,
VGS = 5.0 Vdc) (Note 3)
td(on)
tr
td(off)
tf
QT
Q1
Q2
− 9.9 20
ns
− 79 160
− 19 40
− 38 80
− 11 22 nC
− 3.2 −
− 6.5 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 18 Adc, VGS = 0 Vdc) (Note 3)
(IS = 18 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
0.94 1.15
Vdc
− 0.83 −
Reverse Recovery Time
(IS = 18 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
trr
− 41 −
ns
ta − 26 −
tb − 15 −
Reverse Recovery Stored Charge
QRR
− 0.057 −
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
NTD18N06LT4G
NTDV18N06LT4G
Package
DPAK
(Pb−Free)
DPAK
(Pb−Free)
Shipping
2500 / Tape & Reel
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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NTD18N06L Даташит, Описание, Даташиты
NTD18N06L, NTDV18N06L
40
VGS = 10 V
8V
30
6V
5.5 V
5V
4.5 V
20 4 V
3.5 V
10
3V
0
01 2 3
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
4
40
VDS 10 V
30
20
10 TJ = 25°C
TJ = 100°C
TJ = −55°C
0
1.6 2.4 3.2 4 4.8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
5.6
0.12
0.1
VGS = 5 V
0.08
0.06
0.04
0.02
TJ = 100°C
TJ = 25°C
TJ = −55°C
0.12
0.1
VGS = 10 V
0.08
0.06
0.04
0.02
TJ = 100°C
TJ = 25°C
TJ = −55°C
00
0 10 20 30 40 0 10 20 30 40
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
ID = 9 A
1.8 VGS = 5 V
1.6
10000
VGS = 0 V
1000
TJ = 150°C
1.4
100
1.2
TJ = 100°C
1 10
0.8
0.6
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
0 10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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